Datasheet STPS745 (STMicroelectronics) - 2

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Characteristics STPS745 1 Characteristics Table 2: Absolute ratings (limiting values, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 45 V IF(RMS) Forward rms current 20 A Average forward current TO-220AC / D2PAK TC = 160 °C IF(AV) δ = 0.5, square wave 7.5 A TO-220FPAC TC = 145 °C Surge non repetitive IFSM tp = 10 ms sinusoidal 150 A forward current Repetitive peak PARM tp = 10 µs, T avalanche power j= 125 °C 190 W Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature (1) + 175 °C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameter Symbol Parameter Value Unit
TO-220AC / D2PAK 3.0 Rth(j-c) Junction to case °C/W TO-220FPAC 5.5
Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Tj = 25 °C - 100 µA I (1) R Reverse leakage current VR = VRRM Tj = 125 °C - 5 15 mA Tj = 125 °C IF = 7.5 A - 0.5 0.57 V (1) F Forward voltage drop Tj = 25 °C IF = 15 A - 0.84 V Tj = 125 °C IF = 15 A - 0.65 0.72
Notes:
(1)Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.42 x I 2 F(AV) + 0.020 IF (RMS) 2/14 DocID3516 Rev 8