Datasheet DMN3012LEG (Diodes) - 3
| 制造商 | Diodes |
| 描述 | 30V Synchronous N-Channel Enhancement Mode MOSFET |
| 页数 / 页 | 10 / 3 — DMN3012LEG. Electrical Characteristics. Characteristic. Symbol. Min. Typ. … |
| 文件格式/大小 | PDF / 611 Kb |
| 文件语言 | 英语 |
DMN3012LEG. Electrical Characteristics. Characteristic. Symbol. Min. Typ. Max. Unit. Test Condition. OFF CHARACTERISTICS (Note 7)
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文件文字版本
DMN3012LEG Electrical Characteristics Q2
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 μA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±10V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(TH) 0.75 — 1.15 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 5.2 6 mΩ VGS = 5V, ID = 15A Diode Forward Voltage VSD — — 1.0 V VGS = 0V, IS = 15A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss — 1137 1480 pF VDS = 15V, VGS = 0V, Output Capacitance Coss — 620 810 pF f = 1.0MHz Reverse Transfer Capacitance Crss — 24 32 pF Gate Resistance Rg — 0.54 1.1 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 9.7 12.6 nC Total Gate Charge at VTH Qg(TH) — 0.96 — nC VDS = 15V, ID = 15A Gate-Source Charge Qgs — 1.7 — nC Gate-Drain Charge Qgd — 1.2 — nC Turn-On Delay Time tD(ON) — 4.4 6.6 ns Turn-On Rise Time tR — 3.5 — ns VDD = 15V, VGS = 4.5V, Turn-Off Delay Time t I D(OFF) — 12.4 18.6 ns D = 15A, Rg = 2Ω Turn-Off Fall Time tF — 2.9 — ns Reverse Recovery Time tRR — 30.5 — ns IF = 15A, di/dt = 300A/μs Reverse Recovery Charge QRR — 10.8 — nC Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Typical Circuit
DMN3012LEG 3 of 10 March 2019 Document number: DS41633 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 μA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±10V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(TH) 0.75 — 1.15 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 5.2 6 mΩ VGS = 5V, ID = 15A Diode Forward Voltage VSD — — 1.0 V VGS = 0V, IS = 15A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss — 1137 1480 pF VDS = 15V, VGS = 0V, Output Capacitance Coss — 620 810 pF f = 1.0MHz Reverse Transfer Capacitance Crss — 24 32 pF Gate Resistance Rg — 0.54 1.1 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 9.7 12.6 nC Total Gate Charge at VTH Qg(TH) — 0.96 — nC VDS = 15V, ID = 15A Gate-Source Charge Qgs — 1.7 — nC Gate-Drain Charge Qgd — 1.2 — nC Turn-On Delay Time tD(ON) — 4.4 6.6 ns Turn-On Rise Time tR — 3.5 — ns VDD = 15V, VGS = 4.5V, Turn-Off Delay Time t I D(OFF) — 12.4 18.6 ns D = 15A, Rg = 2Ω Turn-Off Fall Time tF — 2.9 — ns Reverse Recovery Time tRR — 30.5 — ns IF = 15A, di/dt = 300A/μs Reverse Recovery Charge QRR — 10.8 — nC Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
Typical Circuit
DMN3012LEG 3 of 10 March 2019 Document number: DS41633 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated