Datasheet DMN3012LEG (Diodes) - 7

制造商Diodes
描述30V Synchronous N-Channel Enhancement Mode MOSFET
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DMN3012LEG
4.5 4.5 4 4 3.5 3.5 3 3 ) V ) ( 2.5 V 2.5 ( GSV GS 2 V 2 V = 15V, I = 15A DS D 1.5 1.5 V = 15V, I = 15A DS D 1 1 0.5 0.5 0 0 0 2 4 6 8 10 0 1 2 3 4 5 Q (nC) Q (nC) g g Figure 19. Q1 Gate Charge Figure 20. Q2 Gate Charge 100 1000 RDS(ON) P = 100µs W R Limited DS(ON) Limited P = 1ms P = 100µs W W 100 ) 10 A( A) T ( N T E 10 R EN R DC R U 1 R C U P = 10s DC W C N I N A 1 R T = 150℃ AI T = 150℃ D J(Max) R J(Max) , T = 25℃ D T = 25℃ P = 10s I D C W 0.1 C P = 1s W , Single Pulse I D Single Pulse P = 100ms 0.1 P = 1s DUT on 1*MRP W W DUT on 1*MRP Board P = 10ms Board P = 100ms W W V = 5V V = 5V GS P = 1ms GS P = 10ms W W 0.01 0.01 0.1 1 10 100 0.01 0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V) DS V , DRAIN-SOURCE VOLTAGE (V) DS Figure 21. Q1 SOA, Safe Operation Area Figure 22. Q2 SOA, Safe Operation Area 600 ) Single Pulse W R = 112℃/W ( 500 θJA R Rθ (t) = R * r(t) JA θJA E T - T = P * R (t) J A θJA OW 400 P T N EI S 300 N A TR K 200 A E P , )KP 100 (P 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 23. Single Pulse Maximum Power Dissipation DMN3012LEG 7 of 10 March 2019 Document number: DS41633 Rev. 2 - 2
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