Datasheet FSD176MRT (ON Semiconductor) - 14

 Core: EER3019 (Ae=134 mm2)  Bobbin: EER3019 Figure 26. Transformer Specification Table 1. Winding specification Np /2(BOT) Pin(S → F) Wire Turns Winding Method 3→2 0.4φ×1 18 Barrier Tape
TOP BOT Ts Solenoid Winding 2.0 mm 1 3 Solenoid Winding 3.0 mm 1 8 Solenoid Winding 3.0 mm 1 3 Solenoid Winding 3.0 mm 1 5 Solenoid Winding 18 Solenoid Winding Insulation: Polyester Tape t = 0.025 mm, 2 Layers
N5V 7→6 0.4φ×3 (TIW) FSD176MRT — Green-Mode Fairchild Power Switch (FPS™) Transformer Specification Insulation: Polyester Tape t = 0.025 mm, 2 Layers
Na 4→5 0.20φ×1 4.0 mm Insulation: Polyester Tape t = 0.025 mm, 2 Layers
N5V 8→6 0.4φ×3 (TIW) Insulation: Polyester Tape t = 0.025 mm, 2 Layers
N14V 10 → 8 0.4φ×3 (TIW) 1 Insulation: Polyester Tape t = 0.025 mm, 2 Layers
Np/2(TOP) 2→1 0.4φ×1 2.0 mm 1 Insulation: Polyester Tape t = 0.025 mm, 2 Layers Table 2. Electrical Characteristics
Pin Specification Remark Inductance 1－3 465 μH ±6% 67 kHz, 1 V Leakage 1－3 10 μH Maximum Short all other pins © 2011 Fairchild Semiconductor Corporation
FSD176MRT • Rev. 1.0.1 www.fairchildsemi.com
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