Datasheet PMEG120G10ELR (Nexperia)
| 制造商 | Nexperia |
| 描述 | 120 V, 1 A Silicon Germanium (SiGe) rectifier |
| 页数 / 页 | 14 / 1 — PMEG120G10ELR. 120 V, 1 A Silicon Germanium (SiGe) rectifier. 28 February … |
| 修订版 | 28022020 |
| 文件格式/大小 | PDF / 259 Kb |
| 文件语言 | 英语 |
PMEG120G10ELR. 120 V, 1 A Silicon Germanium (SiGe) rectifier. 28 February 2020. Product data sheet. 1. General description
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PMEG120G10ELR 120 V, 1 A Silicon Germanium (SiGe) rectifier 28 February 2020 Product data sheet 1. General description
Silicon Germanium (SiGe) rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits Features Benefits
• Low forward voltage and low Qrr • Excel ent ef iciency • Extremely low leakage current • Extraordinary safe operating area • Thermal stability up to 175 °C junction temperature • Minimal impact on Electro-Magnetic Compatibility (EMC) • Fast and smooth switching allowing simplified certification • Low parasitic capacitance • AEC-Q101 qualified
3. Applications
• High-ef iciency power conversion • Automotive LED lighting • Engine control unit • Server power supply • Base station power supply • Reverse polarity protection • OR-ing
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
IF(AV) average forward δ = 0.5; square wave; f = 20 kHz; Tsp ≤ - - 1 A current 167 °C VR reverse voltage Tj = 25 °C - - 120 V VF forward voltage IF = 1 A; Tj = 25 °C; pulsed [1] - 770 840 mV IR reverse current VR = 120 V; Tj = 25 °C; pulsed [1] - 0.2 30 nA VR = 120 V; Tj = 150 °C; pulsed [1] - 10 100 µA [1] Very short pulse, in order to maintain a stable junction temperature. Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Mounting 15. Revision history 16. Legal information Contents
PMEG120G10ELR 120 V, 1 A Silicon Germanium (SiGe) rectifier 28 February 2020 Product data sheet 1. General description
Silicon Germanium (SiGe) rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits Features Benefits
• Low forward voltage and low Qrr • Excel ent ef iciency • Extremely low leakage current • Extraordinary safe operating area • Thermal stability up to 175 °C junction temperature • Minimal impact on Electro-Magnetic Compatibility (EMC) • Fast and smooth switching allowing simplified certification • Low parasitic capacitance • AEC-Q101 qualified
3. Applications
• High-ef iciency power conversion • Automotive LED lighting • Engine control unit • Server power supply • Base station power supply • Reverse polarity protection • OR-ing
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
IF(AV) average forward δ = 0.5; square wave; f = 20 kHz; Tsp ≤ - - 1 A current 167 °C VR reverse voltage Tj = 25 °C - - 120 V VF forward voltage IF = 1 A; Tj = 25 °C; pulsed [1] - 770 840 mV IR reverse current VR = 120 V; Tj = 25 °C; pulsed [1] - 0.2 30 nA VR = 120 V; Tj = 150 °C; pulsed [1] - 10 100 µA [1] Very short pulse, in order to maintain a stable junction temperature. Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Mounting 15. Revision history 16. Legal information Contents