Datasheet BLF974P (Ampleon) - 9

制造商Ampleon
描述HF / VHF power LDMOS transistor
页数 / 页18 / 9 — BLF974P. HF / VHF power LDMOS transistor. Fig 9. Power gain as a function …
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BLF974P. HF / VHF power LDMOS transistor. Fig 9. Power gain as a function of output power;

BLF974P HF / VHF power LDMOS transistor Fig 9 Power gain as a function of output power;

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BLF974P HF / VHF power LDMOS transistor
amp01220 amp01221 28 90 Gp G ηD (dB) (dB) (dB) (%) (%) (%) 27 (7) (7) (7) (1) (1) (1) 70 (2) (2) (2) (3) (3) (3) 26 (6) (6) (6) (4) (4) (4) (5) (5) (5) (5) (5) (5) (6) (6) (6) 25 50 (7) (7) (7) (4) (4) (4) 24 (3) (3) (3) (2) (2) (2) 30 23 (1) (1) (1) 22 10 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 PL (W) PL (W) VDS = 50 V; f = 225 MHz; tp = 100 s;  = 10 %. VDS = 50 V; f = 225 MHz; tp = 100 s;  = 10 %. (1) IDq = 2  10 mA (1) IDq = 2  10 mA (2) IDq = 2  50 mA (2) IDq = 2  50 mA (3) IDq = 2  100 mA (3) IDq = 2  100 mA (4) IDq = 2  200 mA (4) IDq = 2  200 mA (5) IDq = 2  400 mA (5) IDq = 2  400 mA (6) IDq = 2  500 mA (6) IDq = 2  500 mA (7) IDq = 2  750 mA (7) IDq = 2  750 mA
Fig 9. Power gain as a function of output power; Fig 10. Drain efficiency as a function of output power; typical values typical values
BLF974P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 26 March 2020 9 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 7.4.1 1-Tone CW pulsed 7.4.2 1-Tone CW 7.4.3 2-Tone CW 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents