Datasheet SiZF300DT (Vishay)
| 制造商 | Vishay |
| 描述 | Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode |
| 页数 / 页 | 13 / 1 — SiZF300DT. Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode. … |
| 文件格式/大小 | PDF / 265 Kb |
| 文件语言 | 英语 |
SiZF300DT. Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode. FEATURES. PowerPAIR® 3 x 3F. APPLICATIONS. PRODUCT SUMMARY
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文件文字版本
SiZF300DT
www.vishay.com Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PowerPAIR® 3 x 3F
• TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated Schottky D1 • 100 % Rg and UIS tested S2 • Internally connected half-bridge configuration in 3.3 mm-by-3.3 mm footprint 1 2 3.3 mm G1 • Material categorization: for definitions of compliance 3 S /D 1 2 1 4 S /D 1 2 please see www.vishay.com/doc?99912 3.3 mm G2
APPLICATIONS
V /D Top View Bottom View N-Channel 1 IN 1 MOSFET • CPU core power
PRODUCT SUMMARY
G /G • Computer / server peripherals HS 1
CHANNEL-1 CHANNEL-2
G Return/S V /S -D V • POL 1 1 SW 1 2 DS (V) 30 30 RDS(on) max. () at VGS = 10 V 0.00450 0.00184 • Synchronous buck converter RDS(on) max. () at VGS = 4.5 V 0.00700 0.00257 • Telecom DC/DC G /G Schottky LS 2 Q Diode g typ. (nC) 6.9 19.4 ID (A) a 75 141 N-Channel 2 Configuration Dual MOSFET GND/S2
ORDERING INFORMATION
Package PowerPAIR 3 x 3F Lead (Pb)-free and halogen-free SiZF300DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 UNIT
Drain-source voltage VDS 30 30 V Gate-source voltage VGS +20, -16 +16, -12 TC = 25 °C 75 141 T Continuous drain current (T C = 70 °C 60 113 J = 150 °C) ID TA = 25 °C 23 b, c 34 b, c TA = 70 °C 18 b, c 27 b, c A Pulsed drain current (t = 100 μs) IDM 150 200 T 44 105 Continuous source-drain diode current C = 25 °C IS TA = 25 °C 3.4 b, c 6.2 b, c Single pulse avalanche current I L = 0.1 mH AS 14 16 Single pulse avalanche energy EAS 9.8 12.8 mJ TC = 25 °C 48 74 T Maximum power dissipation C = 70 °C 31 47 PD W TA = 25 °C 3.8 b, c 4.3 b, c TA = 70 °C 2.4 b, c 2.8 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d, e 260
THERMAL RESISTANCE RATINGS CHANNEL-1 CHANNEL-2 PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX.
Maximum junction-to-ambient b, f t 10 s RthJA 26 33 23 29 °C/W Maximum junction-to-case (source) Steady state RthJC 2 2.6 1.3 1.7
Notes
a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3F is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 66 °C/W for channel-1 and 67 °C/W for channel-2 S18-0479-Rev. A, 30-Apr-2018
1
Document Number: 76288 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PowerPAIR® 3 x 3F
• TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated Schottky D1 • 100 % Rg and UIS tested S2 • Internally connected half-bridge configuration in 3.3 mm-by-3.3 mm footprint 1 2 3.3 mm G1 • Material categorization: for definitions of compliance 3 S /D 1 2 1 4 S /D 1 2 please see www.vishay.com/doc?99912 3.3 mm G2
APPLICATIONS
V /D Top View Bottom View N-Channel 1 IN 1 MOSFET • CPU core power
PRODUCT SUMMARY
G /G • Computer / server peripherals HS 1
CHANNEL-1 CHANNEL-2
G Return/S V /S -D V • POL 1 1 SW 1 2 DS (V) 30 30 RDS(on) max. () at VGS = 10 V 0.00450 0.00184 • Synchronous buck converter RDS(on) max. () at VGS = 4.5 V 0.00700 0.00257 • Telecom DC/DC G /G Schottky LS 2 Q Diode g typ. (nC) 6.9 19.4 ID (A) a 75 141 N-Channel 2 Configuration Dual MOSFET GND/S2
ORDERING INFORMATION
Package PowerPAIR 3 x 3F Lead (Pb)-free and halogen-free SiZF300DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 UNIT
Drain-source voltage VDS 30 30 V Gate-source voltage VGS +20, -16 +16, -12 TC = 25 °C 75 141 T Continuous drain current (T C = 70 °C 60 113 J = 150 °C) ID TA = 25 °C 23 b, c 34 b, c TA = 70 °C 18 b, c 27 b, c A Pulsed drain current (t = 100 μs) IDM 150 200 T 44 105 Continuous source-drain diode current C = 25 °C IS TA = 25 °C 3.4 b, c 6.2 b, c Single pulse avalanche current I L = 0.1 mH AS 14 16 Single pulse avalanche energy EAS 9.8 12.8 mJ TC = 25 °C 48 74 T Maximum power dissipation C = 70 °C 31 47 PD W TA = 25 °C 3.8 b, c 4.3 b, c TA = 70 °C 2.4 b, c 2.8 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d, e 260
THERMAL RESISTANCE RATINGS CHANNEL-1 CHANNEL-2 PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX.
Maximum junction-to-ambient b, f t 10 s RthJA 26 33 23 29 °C/W Maximum junction-to-case (source) Steady state RthJC 2 2.6 1.3 1.7
Notes
a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3F is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 66 °C/W for channel-1 and 67 °C/W for channel-2 S18-0479-Rev. A, 30-Apr-2018
1
Document Number: 76288 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000