Datasheet NV6123 (Navitas Semiconductor) - 4
| 制造商 | Navitas Semiconductor |
| 描述 | 650 V GaNFast Power IC |
| 页数 / 页 | 23 / 4 — NV6123. ESD Ratings. SYMBOL. PARAMETER. MAX. UNITS. Thermal Resistance. … |
| 文件格式/大小 | PDF / 2.4 Mb |
| 文件语言 | 英语 |
NV6123. ESD Ratings. SYMBOL. PARAMETER. MAX. UNITS. Thermal Resistance. TYP. Final Datasheet. Rev Nov 22, 2019
该数据表的模型线
文件文字版本
NV6123 ESD Ratings SYMBOL PARAMETER MAX UNITS
HBM Human Body Model (per JS-001-2014) 1,000 V CDM Charged Device Model (per JS-002-2014) 1,000 V
Thermal Resistance SYMBOL PARAMETER TYP UNITS
R (6) Junction-to-Case 2.2 ºC/W ɵJC R (6) Junction-to-Ambient 40 ºC/W ɵJA (6) Rɵ measured on DUT mounted on 1 square inch 2 oz Cu (FR4 PCB)
Final Datasheet 4 Rev Nov 22, 2019
HBM Human Body Model (per JS-001-2014) 1,000 V CDM Charged Device Model (per JS-002-2014) 1,000 V
Thermal Resistance SYMBOL PARAMETER TYP UNITS
R (6) Junction-to-Case 2.2 ºC/W ɵJC R (6) Junction-to-Ambient 40 ºC/W ɵJA (6) Rɵ measured on DUT mounted on 1 square inch 2 oz Cu (FR4 PCB)
Final Datasheet 4 Rev Nov 22, 2019