Datasheet NV6123 (Navitas Semiconductor) - 9
| 制造商 | Navitas Semiconductor |
| 描述 | 650 V GaNFast Power IC |
| 页数 / 页 | 23 / 9 — NV6123. Characteristic Graphs (Cont.). Final Datasheet. Rev Nov 22, 2019 |
| 文件格式/大小 | PDF / 2.4 Mb |
| 文件语言 | 英语 |
NV6123. Characteristic Graphs (Cont.). Final Datasheet. Rev Nov 22, 2019
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NV6123 Characteristic Graphs (Cont.)
Fig. 15. Slew rate (dV/dt) vs. gate drive turn-on Fig. 16. Power dissipation (P ) vs. TOT current set resistance (R ) at T = 25 °C case temperature (T ) DD C Fig. 17. Max. thermal transient impedance (Z ) vs. thJC pulse width (t ) P
Final Datasheet 9 Rev Nov 22, 2019
Fig. 15. Slew rate (dV/dt) vs. gate drive turn-on Fig. 16. Power dissipation (P ) vs. TOT current set resistance (R ) at T = 25 °C case temperature (T ) DD C Fig. 17. Max. thermal transient impedance (Z ) vs. thJC pulse width (t ) P
Final Datasheet 9 Rev Nov 22, 2019