NV6117650 V GaNFast™ Power IC2. Description The NV6117 is a 650 V GaNFast™ power IC, optimized for high frequency, soft-switching topologies. Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital-in, power-out’ high-performance powertrain building block, enabling designers to create the fastest, smallest, most efficient integrated QFN 5 x 6 mmSimplified schematic powertrain in the world. The highest dV/dt immunity, high-speed integrated drive and industry-standard low-profile, low-inductance, 1. Features 5 x 6 mm SMT QFN package allow designers to exploit Navitas GaN technology with simple, quick, dependable GaNFast™ Power IC solutions for breakthrough power density and efficiency. • Monolithically-integrated gate drive Navitas’ GaNFast™ power ICs extend the • Wide logic input range with hysteresis capabilities of traditional topologies such as flyback, • 5 V / 15 V input-compatible half-bridge, resonant, etc. to MHz+ and enable the • Wide VCC range (10 to 30 V) commercial introduction of breakthrough designs. • Programmable turn-on dV/dt • 200 V/ns dV/dt immunity 3. Topologies / Applications • 650 V eMode GaN FET • AC-DC, DC-DC, DC-AC • Low 120 mΩ resistance • Buck, boost, half bridge, full bridge • Zero reverse recovery charge • Active Clamp Flyback, LLC resonant, Class D • 2 MHz operation • Quasi-Resonant Flyback • Mobile fast-chargers, adapters Small, low-profile SMT QFN • Notebook adaptors • 5 x 6 mm footprint, 0.85 mm profile • LED lighting, solar micro-inverters • Minimized package inductance • TV / monitor, wireless power • Server, telecom & networking SMPS Environmental • RoHS, Pb-free, REACH-compliant 4. Typical Application CircuitsDCIN(+)DCOUT(+)DCIN(+)DVCCPWM REG DVDD10V to 24VVCCDZHalf dV/dt PWM REG BridgeVDDDriverNV6117SDICZ dV/dt DVCCPWM REG VNV6117DDSDZ dV/dt 10V to 24VNV6117SDCDCIN(-)DCOUT(-)IN(-)PGNDBoostHalf-bridgeFinal Datasheet1Rev Nov 22, 2019