Datasheet NV6113 (Navitas Semiconductor)

NV6113 650 V GaNFast™ Power IC 2. Description
This 650 V GaNFast power IC is optimized for high frequency, soft-switching topologies. Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital-in, power-out’ high-performance powertrain building block, enabling designers to create the fastest, smallest, most efficient power converters in
QFN 5 x 6 mm Simplified schematic
the world. The highest dV/dt immunity, high-speed integrated drive and industry-standard low-profile, low-inductance, 5 x 6 mm SMT QFN package allow designers to exploit
1. Features
Navitas GaN technology with simple, quick, dependable
GaNFast™ Power IC
solutions for breakthrough power density and efficiency. • GaNFast power ICs extend the capabilities of Monolithically-integrated gate drive traditional topologies such as flyback, half-bridge, • Wide logic input range with hysteresis resonant, etc. to MHz+ and enable the commercial • 5 V / 15 V input-compatible introduction of breakthrough designs. • Wide VCC range (10 to 30 V) • Programmable turn-on dV/dt
3. Topologies / Applications
• 200 V/ns dV/dt immunity • AC-DC, DC-DC, DC-AC • 650 V eMode GaN FET • Buck, boost, half bridge, full bridge • Low 300 mΩ resistance • Active Clamp Flyback, LLC resonant, Class D • Zero reverse recovery charge • Quasi-Resonant Flyback • 2 MHz operation • Mobile fast-chargers, adapters • Notebook adaptors
Small, low-profile SMT QFN
• LED lighting, solar micro-inverters • 5 x 6 mm footprint, 0.85 mm profile • TV / monitor, wireless power • Minimized package inductance • Server, telecom & networking SMPS
Environmental
• RoHS, Pb-free, REACH-compliant
4. Typical Application Circuits DCIN(+) DCOUT(+) DCIN(+) D VCC PWM
REG
D VDD 10V to 24V VCC DZ Half
dV/dt
PWM
REG
Bridge VDD Driver NV6113 S D IC Z
dV/dt
D VCC PWM
REG
V NV6113 DD S DZ
dV/dt
10V to 24V NV6113 S DC DC IN(-) DCOUT(-) IN(-) PGND Boost Half-bridge Final Datasheet 1 Rev Nov 22, 2019