Datasheet NV6113 (Navitas Semiconductor) - 4
| 制造商 | Navitas Semiconductor |
| 描述 | 650 V GaNFast Power IC |
| 页数 / 页 | 22 / 4 — NV6113. 6.3. ESD Ratings. SYMBOL. PARAMETER. MAX. UNITS. 6.4. Thermal … |
| 文件格式/大小 | PDF / 1.9 Mb |
| 文件语言 | 英语 |
NV6113. 6.3. ESD Ratings. SYMBOL. PARAMETER. MAX. UNITS. 6.4. Thermal Resistance. TYP. Final Datasheet. Rev Nov 22, 2019
该数据表的模型线
文件文字版本
NV6113 6.3. ESD Ratings SYMBOL PARAMETER MAX UNITS
HBM Human Body Model (per JS-001-2014) 1,000 V CDM Charged Device Model (per JS-002-2014) 1,000 V
6.4. Thermal Resistance SYMBOL PARAMETER TYP UNITS
R (6) Junction-to-Case 2.5 ºC/W ɵJC R (6) Junction-to-Ambient 50 ºC/W ɵJA (6) Rɵ measured on DUT mounted on 1 square inch 2 oz Cu (FR4 PCB)
Final Datasheet 4 Rev Nov 22, 2019
HBM Human Body Model (per JS-001-2014) 1,000 V CDM Charged Device Model (per JS-002-2014) 1,000 V
6.4. Thermal Resistance SYMBOL PARAMETER TYP UNITS
R (6) Junction-to-Case 2.5 ºC/W ɵJC R (6) Junction-to-Ambient 50 ºC/W ɵJA (6) Rɵ measured on DUT mounted on 1 square inch 2 oz Cu (FR4 PCB)
Final Datasheet 4 Rev Nov 22, 2019