Datasheet HMC1030LP5E (Analog Devices) - 26
| 制造商 | Analog Devices |
| 描述 | Dual RMS Power Detector SMT, Single-Ended, DC - 3.9 GHz |
| 页数 / 页 | 38 / 26 — HMC1030LP5E. DUAL RMS POWER DETECTOR. DC - 3.9 GHz. Application … |
| 文件格式/大小 | PDF / 5.0 Mb |
| 文件语言 | 英语 |
HMC1030LP5E. DUAL RMS POWER DETECTOR. DC - 3.9 GHz. Application Information. Principle of Operation
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HMC1030LP5E
v03.1113
DUAL RMS POWER DETECTOR DC - 3.9 GHz Application Information Principle of Operation
11 T M S - The HMC1030LP5E is a dual-channel RMS and Envelope detector in a single package. The HMC1030LP5E’s RMS detector core is designed to measure the actual RMS power of the input signal, independent of the modulated signal RS waveform complexity or the modulation scheme. The RMS detector core architecture of HMC1030LP5E is composed O of a ful -wave rectifier, log/antilog circuit, and an integrator as shown above. The RMS output signal is directly T proportional to the logarithm of the time-average of V 2. The bias block also contains temperature compensation IN C circuits which stabilize output accuracy over the entire operating temperature range. The DC offset cancel ation circuit actively cancels internal offsets so that even very small input signal levels can be measured accurately. TE The HMC1030LP5E supports control er mode operation. For more information regarding control er mode operation, E please contact Hittite application support. D The HMC1030LP5E achieves exceptional RF power measurement accuracy independent of the modulation of the R carrier with this system architecture. The relation between the HMC1030LP5E’s RMSOUT output and the RF input power is given below WE O
VRMSA vs. P with WCDMA 4 Carrier IN
P V
@ 1900 MHz
RMSOUT = 1 ln(ßkG2∫VIN2dt) k 3 2.5 Ideal Measured Where ß is op-amp gain set via resistors on the V pin. 2 set P = V /[log-slope]+[log-intercept], dBm in RMS 1.5 RMSOUT (V) 1 0.5 0 -70 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) Info F rmoatr p ion rfiurcne is , d hed ebly ivAe n r al y a og D n evd t ice o p s is bla eli c eve o ed t rd o b e e ras: H ccuratite tiatne M d reli iac bl reo . w Ho av wev e C er, n o o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rporation, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
11 - 26
Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 p o lica rti a o p n S p u s p @ po h rt itt : P ite ho . n c e om : 1-800-ANALOG-D
v03.1113
DUAL RMS POWER DETECTOR DC - 3.9 GHz Application Information Principle of Operation
11 T M S - The HMC1030LP5E is a dual-channel RMS and Envelope detector in a single package. The HMC1030LP5E’s RMS detector core is designed to measure the actual RMS power of the input signal, independent of the modulated signal RS waveform complexity or the modulation scheme. The RMS detector core architecture of HMC1030LP5E is composed O of a ful -wave rectifier, log/antilog circuit, and an integrator as shown above. The RMS output signal is directly T proportional to the logarithm of the time-average of V 2. The bias block also contains temperature compensation IN C circuits which stabilize output accuracy over the entire operating temperature range. The DC offset cancel ation circuit actively cancels internal offsets so that even very small input signal levels can be measured accurately. TE The HMC1030LP5E supports control er mode operation. For more information regarding control er mode operation, E please contact Hittite application support. D The HMC1030LP5E achieves exceptional RF power measurement accuracy independent of the modulation of the R carrier with this system architecture. The relation between the HMC1030LP5E’s RMSOUT output and the RF input power is given below WE O
VRMSA vs. P with WCDMA 4 Carrier IN
P V
@ 1900 MHz
RMSOUT = 1 ln(ßkG2∫VIN2dt) k 3 2.5 Ideal Measured Where ß is op-amp gain set via resistors on the V pin. 2 set P = V /[log-slope]+[log-intercept], dBm in RMS 1.5 RMSOUT (V) 1 0.5 0 -70 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) Info F rmoatr p ion rfiurcne is , d hed ebly ivAe n r al y a og D n evd t ice o p s is bla eli c eve o ed t rd o b e e ras: H ccuratite tiatne M d reli iac bl reo . w Ho av wev e C er, n o o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rporation, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
11 - 26
Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 p o lica rti a o p n S p u s p @ po h rt itt : P ite ho . n c e om : 1-800-ANALOG-D