Datasheet FS8205 (Fortune Semiconductor) - 3
| 制造商 | Fortune Semiconductor |
| 描述 | Dual N-Channel Enhancement Mode Power MOSFET |
| 页数 / 页 | 6 / 3 |
| 文件格式/大小 | PDF / 779 Kb |
| 文件语言 | 英语 |
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FS8205 1. Features 1.1 Low on-resistance 1.1.1 RDS(ON) = 28 mΩ MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 37 mΩ MAX. (VGS = 2.5V, ID = 3A) Applications
3. Li-ion battery management applications RT
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y 2. Ordering Information Product Number Description Package Type Quantity/Reel FS8205 SOT23-6 package version SOT23-6 3,000 Pin Assignment FO 4. For FS8205
w : A~Z or A ~ Z
Top points, bottom points & w: Lot no information 5. Absolute Maximum Ratings
Symbol VDS Parameter Rating Units Drain-Source Voltage 20 V Gate-Source Voltage ±12 V ID @TA = 25℃ Continuous Drain Current3 6 A ID @TA = 70℃ Continuous Drain Current3 5 A IDM Pulsed Drain Current1 25 A Total Power Dissipation 1 W Fo VGS PD @TA = 25℃ Linear Derating Factor 0.008 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Rev. 1.9 3/3
3. Li-ion battery management applications RT
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r R ro U
ef pe NE
er rti
’
en es
ce
O
nl
y 2. Ordering Information Product Number Description Package Type Quantity/Reel FS8205 SOT23-6 package version SOT23-6 3,000 Pin Assignment FO 4. For FS8205
w : A~Z or A ~ Z
Top points, bottom points & w: Lot no information 5. Absolute Maximum Ratings
Symbol VDS Parameter Rating Units Drain-Source Voltage 20 V Gate-Source Voltage ±12 V ID @TA = 25℃ Continuous Drain Current3 6 A ID @TA = 70℃ Continuous Drain Current3 5 A IDM Pulsed Drain Current1 25 A Total Power Dissipation 1 W Fo VGS PD @TA = 25℃ Linear Derating Factor 0.008 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Rev. 1.9 3/3