Datasheet FZT789A (Diodes) - 4
| 制造商 | Diodes |
| 描述 | 25V PNP Medium Power Transistor in SOT223 |
| 页数 / 页 | 7 / 4 — A Product Line of. Diodes Incorporated. FZT789A. Electrical … |
| 文件格式/大小 | PDF / 885 Kb |
| 文件语言 | 英语 |
A Product Line of. Diodes Incorporated. FZT789A. Electrical Characteristics. Characteristic. Symbol. Min. Typ. Max. Unit. Test Condition
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A Product Line of Diodes Incorporated FZT789A Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -30 -40 V IC = -100µA Collector-Emitter Breakdown Voltage (Note 12) BVCEO -25 -35 V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8.5 V IE = -100µA <1 -100 nA V Collector Cut-Off Current CB = -15V ICBO -10 µA VCB = -15V, Tamb = +100°C Collector Cut-Off Current ICES <1 -100 nA VCE = -15V Emitter Cut-Off Current IEBO <1 -100 nA VEB = -5.6V -0.15 -0.25 IC = -1A, IB = -10mA Collector-Emitter Saturation Voltage (Note 12) VCE(sat) V -0.30 -0.45 IC = -2A, IB = -20mA -0.30 -0.50 IC = -3A, IB = -100mA Base-Emitter Saturation Voltage (Note 12) VBE(sat) -0.80 -1.0 V IC = -1A, IB = -10mA Base-Emitter Turn-On Voltage (Note 12) VBE(on) -0.75 -1.1 V IC = -1A, VCE = -2V 300 800 IC = -10mA, VCE = -2V 250 I DC Current Gain (Note 12) C = -1A, VCE = -2V h FE 200 IC = -2A, VCE = -2V 100 IC = -6A, VCE = -2V V Current Gain-Bandwidth Product f CE = -5V, IC = -50mA T 100 MHz f = 50MHz Turn-On Time ton 35 ns VCC = -10V, IC = -500mA Turn-Off Time toff 400 ns IB1 = IB2 = -50mA Input Capacitance Cibo 225 pF VEB = -0.5V, f = 1MHz Output Capacitance Cobo 25 pF VCB = -10V, f = 1MHz Note: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. FZT789A 4 of 7 April 2015 Document Number DS33168 Rev. 6 - 2
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(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -30 -40 V IC = -100µA Collector-Emitter Breakdown Voltage (Note 12) BVCEO -25 -35 V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8.5 V IE = -100µA <1 -100 nA V Collector Cut-Off Current CB = -15V ICBO -10 µA VCB = -15V, Tamb = +100°C Collector Cut-Off Current ICES <1 -100 nA VCE = -15V Emitter Cut-Off Current IEBO <1 -100 nA VEB = -5.6V -0.15 -0.25 IC = -1A, IB = -10mA Collector-Emitter Saturation Voltage (Note 12) VCE(sat) V -0.30 -0.45 IC = -2A, IB = -20mA -0.30 -0.50 IC = -3A, IB = -100mA Base-Emitter Saturation Voltage (Note 12) VBE(sat) -0.80 -1.0 V IC = -1A, IB = -10mA Base-Emitter Turn-On Voltage (Note 12) VBE(on) -0.75 -1.1 V IC = -1A, VCE = -2V 300 800 IC = -10mA, VCE = -2V 250 I DC Current Gain (Note 12) C = -1A, VCE = -2V h FE 200 IC = -2A, VCE = -2V 100 IC = -6A, VCE = -2V V Current Gain-Bandwidth Product f CE = -5V, IC = -50mA T 100 MHz f = 50MHz Turn-On Time ton 35 ns VCC = -10V, IC = -500mA Turn-Off Time toff 400 ns IB1 = IB2 = -50mA Input Capacitance Cibo 225 pF VEB = -0.5V, f = 1MHz Output Capacitance Cobo 25 pF VCB = -10V, f = 1MHz Note: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. FZT789A 4 of 7 April 2015 Document Number DS33168 Rev. 6 - 2
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