Datasheet TLP170AM (Toshiba) - 3

TLP170AM 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit LED Input forward current IF 30 mA Input forward current derating (Ta ≥ 25 ) ∆IF/∆Ta -0.3 mA/ Input forward current (pulsed) (100 µs pulse, 100 pps) IFP 1 A Input reverse voltage VR 6 V Input power dissipation PD 50 mW Input power dissipation derating (Ta ≥ 25 ) ∆PD/∆Ta -0.5 mW/ Junction temperature Tj 125 Detector OFF-state output terminal voltage VOFF 60 V ON-state current ION 700 mA ON-state current derating (Ta ≥ 50 ) ∆ION/∆Ta -8.3 mA/ ON-state current (pulsed) (t = 100 ms, duty = 1/10) IONP 2.1 A Output power dissipation PO 300 mW Output power dissipation derating (Ta ≥ 50 ) ∆PO/∆Ta -4.0 mW/ Junction temperature Tj 125 Common Storage temperature Tstg -55 to 125 Operating temperature Topr -40 to 85 Lead soldering temperature (10 s) Tsol 260 Isolation voltage (AC, 60 s, R.H. ≤ 60 %) BVS (Note 1) 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. 7. Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Supply voltage VDD   48 V Input forward current IF  2 25 mA ON-state current ION   700 Operating temperature Topr -40  85 Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. 8. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Test Condition Min Typ. Max Unit LED Input forward voltage VF IF = 10 mA 1.1 1.27 1.4 V Input reverse current IR VR = 5 V   10 µA Input capacitance Ct V = 0 V, f = 1 MHz  30  pF Detector OFF-state current IOFF VOFF = 60 V  0.002 1 µA Output capacitance COFF V = 0 V, f = 1 MHz  100  pF ©2020 3 2020-05-07 Toshiba Electronic Devices & Storage Corporation Rev.1.0