Datasheet RH1011 (Analog Devices) - 2
| 制造商 | Analog Devices |
| 描述 | Voltage Comparator |
| 页数 / 页 | 4 / 2 — TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 10). TA = … |
| 修订版 | E |
| 文件格式/大小 | PDF / 128 Kb |
| 文件语言 | 英语 |
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 10). TA = 25°C. SUB-. –55°C ≤ TA ≤ 125°C. SYMBOL PARAMETER. CONDITIONS
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RH1011
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 10) TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VOS Input Offset Voltage 3 1.5 1 3.0 2,3 mV RS ≤ 50kΩ 4 2.0 1 3.0 2,3 mV IOS Input Offset Current 3,4 4 1 20 2,3 nA IB Input Bias Current 3 50 1 80 2,3 nA 4 65 1 80 2,3 nA ∆VOS Input Offset Voltage Drift TMIN ≤ T ≤ TMAX 5,9 25 µV/°C ∆T AVOL Large Signal Voltage Gain VS = ±15V, RL = 1kΩ, 200 4 V/mV –10V ≤ VOUT ≤ 14.5V VS = 5V, RL = 500Ω, 50 4 V/mV 0.5V ≤ VOUT ≤ 4.5V CMRR Common Mode Rejection 90 1 dB Ratio Input Voltage Range VS = ±15V 8,9 –14.5 13 –14.5 13 V VS = Single 5V 8,9 0.5 3.0 0.5 3.0 V td Response Time 6,9 250 ns VOL Output Saturation Voltage VIN = –5mV, ISINK = 8mA 11 0.4 1 0.5 2,3 V ISINK = 50mA 1.5 1 1.5 2,3 V Output Leakage Current VIN = 5mV, VGND = –15V, 10 1 500 2,3 nA VOUT = 20V Positive Supply Current 11 4.0 1 mA Negative Supply Current 11 2.5 1 mA Strobe Current Minimum to Ensure Output 7,9,11 500 µA Transistor is Turned Off Input Capacitance 6 pF
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 10) 10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 100KRAD (Si) 200KRAD (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 1.5 1.5 1.5 2.5 4 mV IOS Input Offset Current 4 4 4 20 50 nA IB Input Bias Current 50 100 150 200 300 nA AVOL Large-Signal Voltage RL = 1kΩ, 200 200 150 100 50 V/mV Gain –10V ≤ VOUT ≤ 14.5V CMRR Common Mode 90 90 90 90 86 dB Rejection Ratio Input Voltage Range VS = ±15V 8,9 –14.5 13 –14.5 13 –14.5 13 –14.5 13 –14.5 13 V VS = Single 5V 0.5 3.0 0.5 3.0 0.5 3.0 0.5 3.0 0.5 3.0 V VOL Output Saturation VIN = –5mV, ISINK = 8mA 11 0.4 0.4 0.4 0.4 0.4 V Voltage ISINK = 50mA 1.5 1.5 1.5 1.5 1.5 V Output Leakage Current VIN = 5mV, VGND = –15V 10 10 100 100 100 nA VOUT = 20V Rev. E 2 For more information www.analog.com Document Outline Description Burn-In Circuit Package Information Absolute Maximum Ratings Table 1: Electrical characteristics Table 1a: Electrical characteristics Table 2: Electrical Test Requirements Total Dose Bias Circuit Typical Performance Characteristics Revision History
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 10) TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VOS Input Offset Voltage 3 1.5 1 3.0 2,3 mV RS ≤ 50kΩ 4 2.0 1 3.0 2,3 mV IOS Input Offset Current 3,4 4 1 20 2,3 nA IB Input Bias Current 3 50 1 80 2,3 nA 4 65 1 80 2,3 nA ∆VOS Input Offset Voltage Drift TMIN ≤ T ≤ TMAX 5,9 25 µV/°C ∆T AVOL Large Signal Voltage Gain VS = ±15V, RL = 1kΩ, 200 4 V/mV –10V ≤ VOUT ≤ 14.5V VS = 5V, RL = 500Ω, 50 4 V/mV 0.5V ≤ VOUT ≤ 4.5V CMRR Common Mode Rejection 90 1 dB Ratio Input Voltage Range VS = ±15V 8,9 –14.5 13 –14.5 13 V VS = Single 5V 8,9 0.5 3.0 0.5 3.0 V td Response Time 6,9 250 ns VOL Output Saturation Voltage VIN = –5mV, ISINK = 8mA 11 0.4 1 0.5 2,3 V ISINK = 50mA 1.5 1 1.5 2,3 V Output Leakage Current VIN = 5mV, VGND = –15V, 10 1 500 2,3 nA VOUT = 20V Positive Supply Current 11 4.0 1 mA Negative Supply Current 11 2.5 1 mA Strobe Current Minimum to Ensure Output 7,9,11 500 µA Transistor is Turned Off Input Capacitance 6 pF
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 10) 10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 100KRAD (Si) 200KRAD (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 1.5 1.5 1.5 2.5 4 mV IOS Input Offset Current 4 4 4 20 50 nA IB Input Bias Current 50 100 150 200 300 nA AVOL Large-Signal Voltage RL = 1kΩ, 200 200 150 100 50 V/mV Gain –10V ≤ VOUT ≤ 14.5V CMRR Common Mode 90 90 90 90 86 dB Rejection Ratio Input Voltage Range VS = ±15V 8,9 –14.5 13 –14.5 13 –14.5 13 –14.5 13 –14.5 13 V VS = Single 5V 0.5 3.0 0.5 3.0 0.5 3.0 0.5 3.0 0.5 3.0 V VOL Output Saturation VIN = –5mV, ISINK = 8mA 11 0.4 0.4 0.4 0.4 0.4 V Voltage ISINK = 50mA 1.5 1.5 1.5 1.5 1.5 V Output Leakage Current VIN = 5mV, VGND = –15V 10 10 100 100 100 nA VOUT = 20V Rev. E 2 For more information www.analog.com Document Outline Description Burn-In Circuit Package Information Absolute Maximum Ratings Table 1: Electrical characteristics Table 1a: Electrical characteristics Table 2: Electrical Test Requirements Total Dose Bias Circuit Typical Performance Characteristics Revision History