Datasheet IR53HD420, IR53H420 (Infineon)
| 制造商 | Infineon |
| 描述 | Self-Oscillating Half Bridge |
| 页数 / 页 | 8 / 1 — Preliminary Data Sheet No. PD60140-K. IR53H(D)420. SELF-OSCILLATING HALF … |
| 文件格式/大小 | PDF / 72 Kb |
| 文件语言 | 英语 |
Preliminary Data Sheet No. PD60140-K. IR53H(D)420. SELF-OSCILLATING HALF BRIDGE. Features. Product Summary. Package. Description
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Preliminary Data Sheet No. PD60140-K IR53H(D)420 SELF-OSCILLATING HALF BRIDGE Features Product Summary
• Output power MOSFETs in half-bridge configuration • High side gate drive designed for bootstrap operation • Bootstrap diode integrated into package (HD type) VIN (max) 500V • Tighter initial deadtime control • Low temperature coefficient deadtime Duty Cycle 50% • 15.6V zener clamped Vcc for offline operation • Half-bridge output is out of phase with R Deadtime (type.) 1.2µs T • True micropower startup • Rds(on) 3.0Ω Shutdown feature (1/6th VCC) on CT lead • Increased undervoltage lockout hysteresis (1Volt) P • D (TA = 25oC) 2.0W or 3.0W Lower power level-shifting circuit • Lower di/dt gate drive for better noise immunity • Excellent latch immunity on all inputs and outputs • ESD protection on all leads
Package
• Constant VO pulse width at startup • Heatsink package version (P2 type)
Description
The IR53H(D)420 are complete high voltage, high speed, self- oscillating half-bridge circuits. Proprietary HVIC and latch im- mune CMOS technologies, along with the HEXFET
®
power MOSFET technology, enable ruggedized single package con- 7-Lead SIP struction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propa- gation delays for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to the VIN (max) rating.
Typical Connection
HV DC Bus IR53H(D)420 VIN D1 External 1 6 Vcc V Fast recovery diode D1 is not B required for HD type 2 9 R V T IN RT 3 7 C VO T CT 4 COM TO, LOAD COM www.irf.com 1
• Output power MOSFETs in half-bridge configuration • High side gate drive designed for bootstrap operation • Bootstrap diode integrated into package (HD type) VIN (max) 500V • Tighter initial deadtime control • Low temperature coefficient deadtime Duty Cycle 50% • 15.6V zener clamped Vcc for offline operation • Half-bridge output is out of phase with R Deadtime (type.) 1.2µs T • True micropower startup • Rds(on) 3.0Ω Shutdown feature (1/6th VCC) on CT lead • Increased undervoltage lockout hysteresis (1Volt) P • D (TA = 25oC) 2.0W or 3.0W Lower power level-shifting circuit • Lower di/dt gate drive for better noise immunity • Excellent latch immunity on all inputs and outputs • ESD protection on all leads
Package
• Constant VO pulse width at startup • Heatsink package version (P2 type)
Description
The IR53H(D)420 are complete high voltage, high speed, self- oscillating half-bridge circuits. Proprietary HVIC and latch im- mune CMOS technologies, along with the HEXFET
®
power MOSFET technology, enable ruggedized single package con- 7-Lead SIP struction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propa- gation delays for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to the VIN (max) rating.
Typical Connection
HV DC Bus IR53H(D)420 VIN D1 External 1 6 Vcc V Fast recovery diode D1 is not B required for HD type 2 9 R V T IN RT 3 7 C VO T CT 4 COM TO, LOAD COM www.irf.com 1