Datasheet XPN12006NC (Toshiba)

XPN12006NC MOSFETs Silicon N-channel MOS (U-MOS-H) XPN12006NC 1. Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 9.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance(WF) Start of commercial production 2019-12 ©2019-2020 1 2020-06-24 Toshiba Electronic Devices & Storage Corporation Rev.4.0