Datasheet 1N4614 - 1N4627 (Central Semiconductor)
| 制造商 | Central Semiconductor |
| 描述 | Silicon Zener Diode Low Noise 1.8 Volt thru 6.2 Volt 250mw, 5% Tolerance |
| 页数 / 页 | 3 / 1 — 1N4614 THRU 1N4627. SILICON ZENER DIODE. w w w. c e n t r a l s e m i . c … |
| 文件格式/大小 | PDF / 334 Kb |
| 文件语言 | 英语 |
1N4614 THRU 1N4627. SILICON ZENER DIODE. w w w. c e n t r a l s e m i . c o m. LOW NOISE. DESCRIPTION:. 1.8 VOLT THRU 6.2 VOLT
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文件文字版本
1N4614 THRU 1N4627 SILICON ZENER DIODE w w w. c e n t r a l s e m i . c o m LOW NOISE DESCRIPTION: 1.8 VOLT THRU 6.2 VOLT
The CENTRAL SEMICONDUCTOR 1N4614 series
250mW, 5% TOLERANCE
silicon Zener diode is designed for low leakage, low current, and low noise applications. Higher voltage devices are available in the 1N4099 series.
MARKING: Devices shall either be marked with the prefi x ‘C’ followed by the full part number or by the marking code in the Electrical Characteristics Table. DO-35 CASE MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Power Dissipation PD 250 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS:
(TA=25°C) VF=1.0V MAX @ IF=200mA (for all types)
ZENER MAXIMUM MAXIMUM MAXIMUM MAXIMUM TEST VOLTAGE ZENER REVERSE ZENER NOISE CURRENT V IMPEDANCE CURRENT CURRENT DENSITY MARKING TYPE Z @ IZT CODE MIN NOM MAX IZT ZZT @ IZT IR @ VR IZM ND @ 250μA V V V μA Ω μA V mA μV/ Hz
1N4614 1.710 1.8 1.890 250 1200 7.5 1.0 120 1.0 C4614 1N4615 1.900 2.0 2.100 250 1250 5.0 1.0 110 1.0 C4615 1N4616 2.090 2.2 2.310 250 1300 4.0 1.0 100 1.0 C4616 1N4617 2.280 2.4 2.520 250 1400 2.0 1.0 95 1.0 C4617 1N4618 2.565 2.7 2.835 250 1500 1.0 1.0 90 1.0 C4618 1N4619 2.850 3.0 3.150 250 1600 0.8 1.0 85 1.0 C4619 1N4620 3.135 3.3 3.465 250 1650 7.5 1.5 80 1.0 C4620 1N4621 3.420 3.6 3.780 250 1700 7.5 2.0 75 1.0 C4621 1N4622 3.705 3.9 4.095 250 1650 5.0 2.0 70 1.0 C4622 1N4623 4.085 4.3 4.515 250 1600 4.0 2.0 65 1.0 C4623 1N4624 4.465 4.7 4.935 250 1550 10 3.0 60 1.0 C4624 1N4625 4.845 5.1 5.355 250 1500 10 3.0 55 2.0 C4625 1N4626 5.320 5.6 5.880 250 1400 10 4.0 50 4.0 C4626 1N4627 5.890 6.2 6.510 250 1200 10 5.0 45 5.0 C4627 R4 (6-December 2019)
The CENTRAL SEMICONDUCTOR 1N4614 series
250mW, 5% TOLERANCE
silicon Zener diode is designed for low leakage, low current, and low noise applications. Higher voltage devices are available in the 1N4099 series.
MARKING: Devices shall either be marked with the prefi x ‘C’ followed by the full part number or by the marking code in the Electrical Characteristics Table. DO-35 CASE MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Power Dissipation PD 250 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS:
(TA=25°C) VF=1.0V MAX @ IF=200mA (for all types)
ZENER MAXIMUM MAXIMUM MAXIMUM MAXIMUM TEST VOLTAGE ZENER REVERSE ZENER NOISE CURRENT V IMPEDANCE CURRENT CURRENT DENSITY MARKING TYPE Z @ IZT CODE MIN NOM MAX IZT ZZT @ IZT IR @ VR IZM ND @ 250μA V V V μA Ω μA V mA μV/ Hz
1N4614 1.710 1.8 1.890 250 1200 7.5 1.0 120 1.0 C4614 1N4615 1.900 2.0 2.100 250 1250 5.0 1.0 110 1.0 C4615 1N4616 2.090 2.2 2.310 250 1300 4.0 1.0 100 1.0 C4616 1N4617 2.280 2.4 2.520 250 1400 2.0 1.0 95 1.0 C4617 1N4618 2.565 2.7 2.835 250 1500 1.0 1.0 90 1.0 C4618 1N4619 2.850 3.0 3.150 250 1600 0.8 1.0 85 1.0 C4619 1N4620 3.135 3.3 3.465 250 1650 7.5 1.5 80 1.0 C4620 1N4621 3.420 3.6 3.780 250 1700 7.5 2.0 75 1.0 C4621 1N4622 3.705 3.9 4.095 250 1650 5.0 2.0 70 1.0 C4622 1N4623 4.085 4.3 4.515 250 1600 4.0 2.0 65 1.0 C4623 1N4624 4.465 4.7 4.935 250 1550 10 3.0 60 1.0 C4624 1N4625 4.845 5.1 5.355 250 1500 10 3.0 55 2.0 C4625 1N4626 5.320 5.6 5.880 250 1400 10 4.0 50 4.0 C4626 1N4627 5.890 6.2 6.510 250 1200 10 5.0 45 5.0 C4627 R4 (6-December 2019)