Datasheet EPC2215 (Efficient Power Conversion)
| 制造商 | Efficient Power Conversion |
| 描述 | Enhancement-Mode Power Transistor |
| 页数 / 页 | 6 / 1 — eGaN® FET DATASHEET. EPC2215 – Enhancement Mode Power Transistor. … |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
eGaN® FET DATASHEET. EPC2215 – Enhancement Mode Power Transistor. EFFICIENT POWER CONVERSION. HAL. Maximum Ratings. EPC2215
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eGaN® FET DATASHEET
EPC2215
EPC2215 – Enhancement Mode Power Transistor D
VDS , 200 V
EFFICIENT POWER CONVERSION G
RDS(on) , 8 mΩ
HAL
ID , 32 A
S
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings EPC2215 eGaN® FETs are supplied only in passivated die form with solder bars. PARAMETER VALUE UNIT Die Size: 4.6 mm x 1.6 mm
VDS Drain-to-Source Voltage (Continuous) 200 V Continuous (T I A = 25°C) 32 A
Applications
D Pulsed (25°C, TPULSE = 300 µs) 162 • DC-DC Converters • Wireless Power Gate-to-Source Voltage 6 • BLDC Motor Drives • Solar Micro Inverters VGS V Gate-to-Source Voltage -4 • Sync Rectification for • Robotics TJ Operating Temperature -40 to 150 AC/DC and DC-DC • Class-D Audio °C T • Multi-level AC/DC STG Storage Temperature -40 to 150 Power Supplies
Thermal Characteristics Benefits PARAMETER TYP UNIT
• Ultra High Efficiency R • No Reverse Recovery θJC Thermal Resistance, Junction-to-Case 0.5 • Ultra Low Q R °C/W G θJB Thermal Resistance, Junction-to-Board 2.5 • Small Footprint RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 52 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.6 mA 200 V IDSS Drain-Source Leakage VGS = 0 V, VDS = 160 V 0.15 0.48 Gate-to-Source Forward Leakage VGS = 5 V 0.03 3.8 mA IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.5 8.7 Gate-to-Source Reverse Leakage VGS = -4 V 0.15 0.48 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 6 mA 0.8 1.1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 20 A 6 8 mΩ VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V 1.6 V # Defined by design. Not subject to production test. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 1
EPC2215
EPC2215 – Enhancement Mode Power Transistor D
VDS , 200 V
EFFICIENT POWER CONVERSION G
RDS(on) , 8 mΩ
HAL
ID , 32 A
S
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings EPC2215 eGaN® FETs are supplied only in passivated die form with solder bars. PARAMETER VALUE UNIT Die Size: 4.6 mm x 1.6 mm
VDS Drain-to-Source Voltage (Continuous) 200 V Continuous (T I A = 25°C) 32 A
Applications
D Pulsed (25°C, TPULSE = 300 µs) 162 • DC-DC Converters • Wireless Power Gate-to-Source Voltage 6 • BLDC Motor Drives • Solar Micro Inverters VGS V Gate-to-Source Voltage -4 • Sync Rectification for • Robotics TJ Operating Temperature -40 to 150 AC/DC and DC-DC • Class-D Audio °C T • Multi-level AC/DC STG Storage Temperature -40 to 150 Power Supplies
Thermal Characteristics Benefits PARAMETER TYP UNIT
• Ultra High Efficiency R • No Reverse Recovery θJC Thermal Resistance, Junction-to-Case 0.5 • Ultra Low Q R °C/W G θJB Thermal Resistance, Junction-to-Board 2.5 • Small Footprint RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 52 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.6 mA 200 V IDSS Drain-Source Leakage VGS = 0 V, VDS = 160 V 0.15 0.48 Gate-to-Source Forward Leakage VGS = 5 V 0.03 3.8 mA IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.5 8.7 Gate-to-Source Reverse Leakage VGS = -4 V 0.15 0.48 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 6 mA 0.8 1.1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 20 A 6 8 mΩ VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V 1.6 V # Defined by design. Not subject to production test. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 1