Datasheet AP22652, AP22653, AP22652A, AP22653A (Diodes) - 4
| 制造商 | Diodes |
| 描述 | Precision Adjustable Current-Limited Power Switches |
| 页数 / 页 | 17 / 4 — AP22652/AP22653/AP22652A/AP22653A. Absolute Maximum Ratings. Symbol. … |
| 文件格式/大小 | PDF / 1.1 Mb |
| 文件语言 | 英语 |
AP22652/AP22653/AP22652A/AP22653A. Absolute Maximum Ratings. Symbol. Parameter. Ratings. Unit. Dissipation Rating Table. Thermal
该数据表的模型线
文件文字版本
AP22652/AP22653/AP22652A/AP22653A Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Symbol Parameter Ratings Unit
HBM Human Body Model ESD Protection 2 kV CDM Charged Device Model ESD Protection 500 V ESD IEC System Surges per IEC61000-4-2. 1999 Applied to Output 15 kV Level Terminals of EVM (Note 6) VIN, VOUT, V FAULT, VILIM, EN V V Voltage on IN, OUT, FAULT , ILIM, EN, EN -0.3 to +6.0 V EN — Continuous FAULT Sink Current 25 mA — ILIM Source Current 1 mA ILOAD Maximum Continuous Load Current Internal Limited A TJ(MAX) Maximum Junction Temperature -40 to +150 °C TSTG Storage Temperature Range (Note 5) -65 to +150 °C Notes: 5. UL Recognized Rating from -30°C to +70°C (Diodes Incorporated qualified TSTG from -65°C to +150°C). 6. External capacitors need to be connected to the output, EVM board was tested with external capacitor. This level is a pass test only and not a limit. Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, can cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability can be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and can be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.
Dissipation Rating Table Thermal Thermal Derating Factor T TA = +70°C T Board Package Resistance Resistance A ≤ +25° C Above A = +85° C θ Power Rating Power Rating Power Rating JA θJC TA = +25°C
High-K (Note 7) W6 120
°
C/W 35
°
C/W 830mW 8.3mW/
°
C 450mW 330mW High-K (Note 7) FDZ 95
°
C/W 25
°
C/W 1050mW 10.05mW/
°
C 570mW 420mW Note: 7. The JEDEC high-K (2s2p) board used to derive this data was a 3inch x 3inch, multilayer board with 1oz internal power and ground planes with 2oz copper traces on top and bottom of the board.
Recommended Operating Conditions
(@TA = +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
VIN Input Voltage 3 5.5 V IOUT Continuous Output Current (-40°C ≤ TA ≤ +85°C) 0 2.1 A , EN V VEN Enable Voltage 0 5.5 V VIH High-Level Input Voltage on EN or EN 1.5 VIN V VIL Low-Level Input Voltage on EN or EN 0 0.4 V Current-Limit Threshold Resistor Range RLIM 10 210 kΩ (1% Initial Tolerance) IO Continuous FAULT Sink Current 0 10 mA — Input De-Coupling Capacitance, IN to GND 0.1 — µF TA Operating Ambient Temperature -40 +85 °C TJ Operating Junction Temperature -40 +125 °C AP22652/AP22653/AP22652A/AP22653A 4 of 17 July 2020 Document number: DS41186 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Symbol Parameter Ratings Unit
HBM Human Body Model ESD Protection 2 kV CDM Charged Device Model ESD Protection 500 V ESD IEC System Surges per IEC61000-4-2. 1999 Applied to Output 15 kV Level Terminals of EVM (Note 6) VIN, VOUT, V FAULT, VILIM, EN V V Voltage on IN, OUT, FAULT , ILIM, EN, EN -0.3 to +6.0 V EN — Continuous FAULT Sink Current 25 mA — ILIM Source Current 1 mA ILOAD Maximum Continuous Load Current Internal Limited A TJ(MAX) Maximum Junction Temperature -40 to +150 °C TSTG Storage Temperature Range (Note 5) -65 to +150 °C Notes: 5. UL Recognized Rating from -30°C to +70°C (Diodes Incorporated qualified TSTG from -65°C to +150°C). 6. External capacitors need to be connected to the output, EVM board was tested with external capacitor. This level is a pass test only and not a limit. Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, can cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability can be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and can be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.
Dissipation Rating Table Thermal Thermal Derating Factor T TA = +70°C T Board Package Resistance Resistance A ≤ +25° C Above A = +85° C θ Power Rating Power Rating Power Rating JA θJC TA = +25°C
High-K (Note 7) W6 120
°
C/W 35
°
C/W 830mW 8.3mW/
°
C 450mW 330mW High-K (Note 7) FDZ 95
°
C/W 25
°
C/W 1050mW 10.05mW/
°
C 570mW 420mW Note: 7. The JEDEC high-K (2s2p) board used to derive this data was a 3inch x 3inch, multilayer board with 1oz internal power and ground planes with 2oz copper traces on top and bottom of the board.
Recommended Operating Conditions
(@TA = +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
VIN Input Voltage 3 5.5 V IOUT Continuous Output Current (-40°C ≤ TA ≤ +85°C) 0 2.1 A , EN V VEN Enable Voltage 0 5.5 V VIH High-Level Input Voltage on EN or EN 1.5 VIN V VIL Low-Level Input Voltage on EN or EN 0 0.4 V Current-Limit Threshold Resistor Range RLIM 10 210 kΩ (1% Initial Tolerance) IO Continuous FAULT Sink Current 0 10 mA — Input De-Coupling Capacitance, IN to GND 0.1 — µF TA Operating Ambient Temperature -40 +85 °C TJ Operating Junction Temperature -40 +125 °C AP22652/AP22653/AP22652A/AP22653A 4 of 17 July 2020 Document number: DS41186 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated