Datasheet K6R1016V1D (Samsung) - 4

for AT&T K6R1016V1D CMOS SRAM PIN CONFIGURATION
(TOP VIEW) 1 2 3 4 5 6 A0 1 44 A15 A1 2 43 A14 A LB OE A0 A1 A2 N.C A2 3 42 A13 A3 4 41 OE B I/O1 UB A3 A4 CS I/O9 A4 5 40 UB CS 6 39 LB C I/O2 I/O3 A5 A6 I/O11 I/O10 I/O1 7 38 I/O16 I/O2 8 37 I/O15 Vss D I/O4 N.C A7 I/O12 Vcc I/O3 9 36 I/O14 I/O4 10
SOJ/
35 I/O13 Vcc 11 34 Vss E Vcc I/O5 N.C N.C I/O13 Vss
TSOP2
Vss 12 33 Vcc I/O5 13 32 I/O12 F I/O7 I/O6 A14 A15 I/O14 I/O15 I/O6 14 31 I/O11 I/O7 15 30 I/O10 G I/O8 N.C A12 A13 WE I/O16 I/O8 16 29 I/O9 WE 17 28 N.C H A5 18 27 A12 N.C A8 A9 A10 A11 N.C A6 19 26 A11 A7 20 25 A10
48-TBGA
( Top View ) A8 21 24 A9 N.C 22 23 N.C
ABSOLUTE MAXIMUM RATINGS* Parameter Symbol Rating Unit
Voltage on Any Pin Relative to VSS VIN, VOUT -0.5 to 4.6 V Voltage on VCC Supply Relative to VSS VCC -0.5 to 4.6 V Power Dissipation Pd 1 W Storage Temperature TSTG -65 to 150 °C Commercial TA 0 to 70 °C Operating Temperature Industrial TA -40 to 85 °C
*
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(TA= 0 to 70°C)
Parameter Symbol Min Typ Max Unit
Supply Voltage VCC 3.0 3.3 3.6 V Ground VSS 0 0 0 V Input High Voltage VIH 2.0 - VCC+0.3(1) V Input Low Voltage VIL -0.3(2) - 0.8 V (1) VIH(Max) = VCC + 2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA (2) VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA.
Revision 3.0
- 4 -
June 2002