Datasheet SiSS94DN (Vishay) - 4
| 制造商 | Vishay |
| 描述 | N-Channel 200 V (D-S) MOSFET |
| 页数 / 页 | 7 / 4 — SiSS94DN. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. … |
| 文件格式/大小 | PDF / 195 Kb |
| 文件语言 | 英语 |
SiSS94DN. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. Threshold Voltage
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SiSS94DN
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 3.5 10000 I = 250 μA D 3.2 ) 10 (A 1000 ine 1000 T = 150 °C rrent J ) 2.9 u 2nd l T = 25 °C ne ne ine (V ) ne ne 1 J (th 1st li 2nd li 2nd l GS 1st li 2nd li V 2.6 ource C 100 S 100 - 0.1 I S 2.3 0.01 10 2.0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 V - Source-to-Drain Voltage (V) T SD J - Junction Temperature (°C)
Source-Drain Diode Forward Voltage Threshold Voltage
Axis Title Axis Title 0.2 10000 500 10000 I = 5.4 A D 400 (Ω) 0.15 T = 125 °C J 1000 ) 1000 tance s 300 ne ne r (W ine ne ne esi ne 0.1 e w o 1st li 2nd li 2nd l P 1st li T = 25 °C 2nd li 2nd li J 200 - On-R ) 100 P - n 100 0.05 DS(oR 100 0 10 0 10 0 2 4 6 8 10 0.0001 0.001 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) t - Time (s)
On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient
Axis Title 100 10000 I limited DM 100 μs 10 ) 1 ms 1000 1 rrent (A 10 ms ne ne ine u Limited by R a DS(on) C n 100 ms 1st li 2nd l 0.1 2nd li rai D 10 s 100 - I D 1 s 0.01 DC T = 25 °C, A single pulse BVDSS limited 0.001 10 0.1 1 10 100 1000 V - Drain-to-Source Voltage (V) DS
Safe Operating Area, Junction-to-Ambient Note
a. VGS > minimum VGS at which RDS(on) is specified S19-0849-Rev. A, 07-Oct-2019
4
Document Number: 77350 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 3.5 10000 I = 250 μA D 3.2 ) 10 (A 1000 ine 1000 T = 150 °C rrent J ) 2.9 u 2nd l T = 25 °C ne ne ine (V ) ne ne 1 J (th 1st li 2nd li 2nd l GS 1st li 2nd li V 2.6 ource C 100 S 100 - 0.1 I S 2.3 0.01 10 2.0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 V - Source-to-Drain Voltage (V) T SD J - Junction Temperature (°C)
Source-Drain Diode Forward Voltage Threshold Voltage
Axis Title Axis Title 0.2 10000 500 10000 I = 5.4 A D 400 (Ω) 0.15 T = 125 °C J 1000 ) 1000 tance s 300 ne ne r (W ine ne ne esi ne 0.1 e w o 1st li 2nd li 2nd l P 1st li T = 25 °C 2nd li 2nd li J 200 - On-R ) 100 P - n 100 0.05 DS(oR 100 0 10 0 10 0 2 4 6 8 10 0.0001 0.001 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) t - Time (s)
On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient
Axis Title 100 10000 I limited DM 100 μs 10 ) 1 ms 1000 1 rrent (A 10 ms ne ne ine u Limited by R a DS(on) C n 100 ms 1st li 2nd l 0.1 2nd li rai D 10 s 100 - I D 1 s 0.01 DC T = 25 °C, A single pulse BVDSS limited 0.001 10 0.1 1 10 100 1000 V - Drain-to-Source Voltage (V) DS
Safe Operating Area, Junction-to-Ambient Note
a. VGS > minimum VGS at which RDS(on) is specified S19-0849-Rev. A, 07-Oct-2019
4
Document Number: 77350 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000