Datasheet FDS6890A (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 页数 / 页 | 5 / 2 — FDS6890A. Electrical Characteristics. Symbol. Parameter. Test Conditions. … |
| 修订版 | 3 |
| 文件格式/大小 | PDF / 199 Kb |
| 文件语言 | 英语 |
FDS6890A. Electrical Characteristics. Symbol. Parameter. Test Conditions. Min. Typ Max Units. Off Characteristics. On Characteristics
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文件文字版本
FDS6890A Electrical Characteristics
T = 25 C unless otherwise noted A
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C 14 mV/°C ∆T Coefficient J IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, VGS = 8 V, VDS = 0 V 100 nA Forward IGSSR Gate-Body Leakage Current, VGS = -8 V, VDS = 0 V -100 nA Reverse
On Characteristics
(Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.5 0.8 1.5 V ∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C -3.5 mV/°C ∆T Temperature Coefficient J RDS(on) Static Drain-Source VGS = 4.5 V, ID =7.5 A 0.013 0.018 Ω On-Resistance VGS = 4.5 V, ID =7.5 A, TJ =125°C 0.021 0.034 VGS = 2.5 V, ID =6.5 A 0.016 0.022 ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V 20 A gFS Forward Transconductance VDS = 5 V, ID = 7.5 A 35 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 10 V, VGS = 0 V, 2130 pF C f = 1.0 MHz oss Output Capacitance 545 pF Crss Reverse Transfer Capacitance 270 pF
Switching Characteristics
(Note 2) td(on) Turn-On Delay Time VDD = 10 V, ID = 1 A, 13 24 ns t VGS = 4.5 V, RGEN = 6 Ω r Turn-On Rise Time 26 42 ns td(off) Turn-Off Delay Time 65 90 ns tf Turn-Off Fall Time 23 37 ns Qg Total Gate Charge VDS = 10 V, ID = 7.5 A, 23 32 nC Q VGS = 4.5 V, gs Gate-Source Charge 3.2 nC Qgd Gate-Drain Charge 4.4 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current 1.3 A VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) 0.65 1.2 V Voltage
Notes: 1.
Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting JA surface of the drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θCA a) 78° C/W when b) 125° C/W when c) 135° C/W when mounted on a 0.5 in2 mounted on a 0.02 in2 mounted on a minimum pad. pad of 2 oz. copper. pad of 2 oz. copper. Scale 1 : 1 on letter size paper www.onsemi.com 2
T = 25 C unless otherwise noted A
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C 14 mV/°C ∆T Coefficient J IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, VGS = 8 V, VDS = 0 V 100 nA Forward IGSSR Gate-Body Leakage Current, VGS = -8 V, VDS = 0 V -100 nA Reverse
On Characteristics
(Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.5 0.8 1.5 V ∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C -3.5 mV/°C ∆T Temperature Coefficient J RDS(on) Static Drain-Source VGS = 4.5 V, ID =7.5 A 0.013 0.018 Ω On-Resistance VGS = 4.5 V, ID =7.5 A, TJ =125°C 0.021 0.034 VGS = 2.5 V, ID =6.5 A 0.016 0.022 ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V 20 A gFS Forward Transconductance VDS = 5 V, ID = 7.5 A 35 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 10 V, VGS = 0 V, 2130 pF C f = 1.0 MHz oss Output Capacitance 545 pF Crss Reverse Transfer Capacitance 270 pF
Switching Characteristics
(Note 2) td(on) Turn-On Delay Time VDD = 10 V, ID = 1 A, 13 24 ns t VGS = 4.5 V, RGEN = 6 Ω r Turn-On Rise Time 26 42 ns td(off) Turn-Off Delay Time 65 90 ns tf Turn-Off Fall Time 23 37 ns Qg Total Gate Charge VDS = 10 V, ID = 7.5 A, 23 32 nC Q VGS = 4.5 V, gs Gate-Source Charge 3.2 nC Qgd Gate-Drain Charge 4.4 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current 1.3 A VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) 0.65 1.2 V Voltage
Notes: 1.
Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting JA surface of the drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θCA a) 78° C/W when b) 125° C/W when c) 135° C/W when mounted on a 0.5 in2 mounted on a 0.02 in2 mounted on a minimum pad. pad of 2 oz. copper. pad of 2 oz. copper. Scale 1 : 1 on letter size paper www.onsemi.com 2