Datasheet MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M, MOC217M (ON Semiconductor) - 5
| 制造商 | ON Semiconductor |
| 描述 | 8-pin SOIC Single-Channel Phototransistor Output |
| 页数 / 页 | 12 / 5 — TA = 25°C unless otherwise specified. Symbol Parameter Test Conditions … |
| 修订版 | A |
| 文件格式/大小 | PDF / 342 Kb |
| 文件语言 | 英语 |
TA = 25°C unless otherwise specified. Symbol Parameter Test Conditions Min. Typ. Max. Unit EMITTER. Input Forward Voltage
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文件文字版本
TA = 25°C unless otherwise specified. Symbol Parameter Test Conditions Min. Typ. Max. Unit EMITTER
Input Forward Voltage
VF IR
CIN MOC216M, MOC217M IF = 1 mA 1.07 1.3 V MOC205M, MOC206M, MOC207M
MOC211M, MOC212M, MOC213M IF = 10 mA 1.15 1.5 V VR = 6 V 0.001 100 µA Reverse Leakage Current
Input Capacitance 18 pF DETECTOR
ICEO1
ICEO2 Collector-Emitter Dark Current VCE = 10 V, TA = 25°C 1.0 50 nA VCE = 10 V, TA = 100°C 1.0 µA Collector-Emitter Breakdown Voltage
BVCEO MOC205M, MOC206M, MOC207M IC = 100 µA 70 100 V MOC211M, MOC212M, MOC213M,
MOC216M, MOC217M IC = 100 µA 30 100 V BVCBO Collector-Base Breakdown Voltage IC = 10 µA 70 120 V BVECO Emitter-Collector Breakdown Voltage IE = 100 µA 7 10 V Collector-Emitter Capacitance f = 1.0 MHz, VCE = 0 7 pF CCE
COUPLED Collector-Output Current CTR MOC205M IF = 10 mA, VCE = 10 V 40 80 % MOC206M IF = 10 mA, VCE = 10 V 63 125 % MOC207M IF = 10 mA, VCE = 10 V 100 200 % MOC211M IF = 10 mA, VCE = 10 V 20 % MOC212M IF = 10 mA, VCE = 10 V 50 % MOC213M IF = 10 mA, VCE = 10 V 100 % MOC216M IF = 1 mA, VCE = 5 V 50 % MOC217M IF = 1 mA, VCE = 5 V 100 % Collector-Emitter Saturation Voltage
VCE(SAT) MOC205M, MOC206M, MOC207M
MOC211M, MOC212M, MOC213M IC = 2 mA, IF = 10 mA 0.4 V MOC216M, MOC217M IC = 100 µA, IF = 1 mA 0.4 V ton Turn-On Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 7.5 µs toff Turn-Off Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 5.7 µs tr Rise Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 3.2 µs tf Fall Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 4.7 µs ©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5 www.fairchildsemi.com
4 MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler Electrical Characteristics
Input Forward Voltage
VF IR
CIN MOC216M, MOC217M IF = 1 mA 1.07 1.3 V MOC205M, MOC206M, MOC207M
MOC211M, MOC212M, MOC213M IF = 10 mA 1.15 1.5 V VR = 6 V 0.001 100 µA Reverse Leakage Current
Input Capacitance 18 pF DETECTOR
ICEO1
ICEO2 Collector-Emitter Dark Current VCE = 10 V, TA = 25°C 1.0 50 nA VCE = 10 V, TA = 100°C 1.0 µA Collector-Emitter Breakdown Voltage
BVCEO MOC205M, MOC206M, MOC207M IC = 100 µA 70 100 V MOC211M, MOC212M, MOC213M,
MOC216M, MOC217M IC = 100 µA 30 100 V BVCBO Collector-Base Breakdown Voltage IC = 10 µA 70 120 V BVECO Emitter-Collector Breakdown Voltage IE = 100 µA 7 10 V Collector-Emitter Capacitance f = 1.0 MHz, VCE = 0 7 pF CCE
COUPLED Collector-Output Current CTR MOC205M IF = 10 mA, VCE = 10 V 40 80 % MOC206M IF = 10 mA, VCE = 10 V 63 125 % MOC207M IF = 10 mA, VCE = 10 V 100 200 % MOC211M IF = 10 mA, VCE = 10 V 20 % MOC212M IF = 10 mA, VCE = 10 V 50 % MOC213M IF = 10 mA, VCE = 10 V 100 % MOC216M IF = 1 mA, VCE = 5 V 50 % MOC217M IF = 1 mA, VCE = 5 V 100 % Collector-Emitter Saturation Voltage
VCE(SAT) MOC205M, MOC206M, MOC207M
MOC211M, MOC212M, MOC213M IC = 2 mA, IF = 10 mA 0.4 V MOC216M, MOC217M IC = 100 µA, IF = 1 mA 0.4 V ton Turn-On Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 7.5 µs toff Turn-Off Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 5.7 µs tr Rise Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 3.2 µs tf Fall Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 4.7 µs ©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5 www.fairchildsemi.com
4 MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler Electrical Characteristics