Datasheet J175, J176, MMBFJ175, MMBFJ176, MMBFJ177 (ON Semiconductor) - 4

J 175 / J176 / MMBF Typical Performance Characteristics r - )
-20
s DS
100 1,000
o h ) T = A 25°C D A TYP V = 4.5 V m GS(off) R m
50 500
m
-16
0.5 V A ( I DSS IN CE ( "ON J175 / MMBFJ1 V = 0 V ENT GS N r A DS g
-12
1.0 V fs RR CT " R
10 100
1.5 V DU E IN CU
-8
SIST A ON
5 50
2.0 V SC I DS S , g fs @ V = DS 15V, A DR N - V = GS 0 PULSED N
-4
A r @ -100 mV, V = 0 C D 2.5 V 3.0 V 3.5 V R DS GS I V GS ( off ) @ V = - 15V, E - T DS I = - 1.0 D
μ
A ( fs
Ω 0 1 10
) g 76 / MMBFJ177 —
0 -1 -2 -3 -4 -5 1 2 5 10
V - DRAIN-SOURCE VOLTAGE (V) V GS (OFF) - GATE CUTOFF VOLTAGE (V) DS Figure 3. Common Drain-Source Figure 4. Parameter Interactions
-32 16
V = - 15 V V = DS - 15 V ) DS ) V = - 4.5 V GS(off) V = - 4.5 V GS(off) (mA - 55°C
-24
- 55°C (mA
12
T 25°C P-Channe 25°C 125°C 125°C V = 2.5 V V = 2.5 V GS(off) GS(off)
-16 8
- 55°C - 55°C CURREN 25°C IN CURRENT 25°C IN 125°C 125°C DRA
-8
DRA
4
l Switch - - D D I I
0 0 0 1 2 3 4 0 1 2 3 4
V - GATE-SOURCE VOLTAGE (V) GS V - GATE-SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics
)
)
Ω
s (
Ω
o E h
100
C
1000
m N
μ
A V @ 5.0V, 10
μ
A f = 1.0 kHz GS(off) (
50
E C -5.0V -5.0V SIST N r DS A
20
T
100
-10V RE r = DS V D _______ GS _ -10V E 1 - -20V
10
DUC V = - 4.5V GS(off) -20V IZ V GS(off) L A
5
CON
10
RM UT P V = - 2.5V GS(off) NO
2
T - OU DS
1
r
1
-
0 0.2 0.4 0.6 0.8 1
_
0.01
_
0.1
_
1
_
10
os V /V GS GS (off) - NORMALIZED GATE-SOURCE VOLTAGE (V) g I D - DRAIN CURRENT (mA) Figure 7. Normalized Drain Resistance vs. Figure 8. Output Conductance vs. Drain Current Bias Voltage
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