Datasheet MMBFJ177LT1G, SMMBFJ177LT1G (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | JFET Chopper P−Channel − Depletion |
| 页数 / 页 | 4 / 2 — MMBFJ177LT1G, SMMBFJ177LT1G. ELECTRICAL CHARACTERISTICS. Characteristic. … |
| 修订版 | 8 |
| 文件格式/大小 | PDF / 135 Kb |
| 文件语言 | 英语 |
MMBFJ177LT1G, SMMBFJ177LT1G. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. OFF CHARACTERISTICS
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MMBFJ177LT1G, SMMBFJ177LT1G ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (VDS = 0, ID = 1.0 mAdc) V(BR)GSS 30 − Vdc Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc) IGSS − 1.0 nAdc Gate Source Cutoff Voltage (VDS = −15 Vdc, ID = −10 nAdc) VGS(off) 0.8 2.5 Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (VGS = 0, VDS = −15 Vdc) (Note 2) IDSS −1.5 −20 mAdc Drain Cutoff Current (VDS = −15 Vdc, VGS = 10 Vdc) ID(off) − −1.0 nAdc Drain Source On Resistance (ID = −500 mAdc) rDS(on) − 300 W Input Capacitance V C DS = 0, VGS = 10 Vdc iss − 11 pF f = 1.0 MHz Reverse Transfer Capacitance Crss − 5.5 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
−8 14 VGS = 0 V −7 V VGS = 0.1 V 12 GS = 0 V f = 1 MHz −6 10 VGS = 0.3 V −5 8 −4 ANCE (pF) VGS = 0.5 V 6 −3 ACIT VGS = 0.7 V 4 −2 , REVERSE TRANSFER CAP , DRAIN CURRENT (mA) s I D rs VGS = 0.9 V C −1 2 0 0 0 −2 −4 −6 −8 −10 −12 0 −5 −10 −15 −20 −25 VDS, DRAIN−SOURCE VOLTAGE (V) VDS, DRAIN−SOURCE VOLTAGE (V)
Figure 1. Drain Current vs. Drain−Source Figure 2. Reverse Transfer Capacitance Voltage
32 V 28 GS = 0 V f = 1 MHz 24 ANCE (pF) 20 ACIT 16 12 8 , INPUT CAP issC 4 0 0 −5 −10 −15 −20 −25 VDS, DRAIN−SOURCE VOLTAGE (V)
Figure 3. Input Capacitance www.onsemi.com 2
MMBFJ177LT1G, SMMBFJ177LT1G ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (VDS = 0, ID = 1.0 mAdc) V(BR)GSS 30 − Vdc Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc) IGSS − 1.0 nAdc Gate Source Cutoff Voltage (VDS = −15 Vdc, ID = −10 nAdc) VGS(off) 0.8 2.5 Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (VGS = 0, VDS = −15 Vdc) (Note 2) IDSS −1.5 −20 mAdc Drain Cutoff Current (VDS = −15 Vdc, VGS = 10 Vdc) ID(off) − −1.0 nAdc Drain Source On Resistance (ID = −500 mAdc) rDS(on) − 300 W Input Capacitance V C DS = 0, VGS = 10 Vdc iss − 11 pF f = 1.0 MHz Reverse Transfer Capacitance Crss − 5.5 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
−8 14 VGS = 0 V −7 V VGS = 0.1 V 12 GS = 0 V f = 1 MHz −6 10 VGS = 0.3 V −5 8 −4 ANCE (pF) VGS = 0.5 V 6 −3 ACIT VGS = 0.7 V 4 −2 , REVERSE TRANSFER CAP , DRAIN CURRENT (mA) s I D rs VGS = 0.9 V C −1 2 0 0 0 −2 −4 −6 −8 −10 −12 0 −5 −10 −15 −20 −25 VDS, DRAIN−SOURCE VOLTAGE (V) VDS, DRAIN−SOURCE VOLTAGE (V)
Figure 1. Drain Current vs. Drain−Source Figure 2. Reverse Transfer Capacitance Voltage
32 V 28 GS = 0 V f = 1 MHz 24 ANCE (pF) 20 ACIT 16 12 8 , INPUT CAP issC 4 0 0 −5 −10 −15 −20 −25 VDS, DRAIN−SOURCE VOLTAGE (V)
Figure 3. Input Capacitance www.onsemi.com 2