Datasheet ZTX869 (Diodes) - 3
| 制造商 | Diodes |
| 描述 | Silicon Planar Medium Power High Current Transistor |
| 页数 / 页 | 3 / 3 — TYPICAL CHARACTERISTICS. VCE(sat) v IC. hFE v IC. VBE(sat) v IC. VBE(on) … |
| 文件格式/大小 | PDF / 68 Kb |
| 文件语言 | 英语 |
TYPICAL CHARACTERISTICS. VCE(sat) v IC. hFE v IC. VBE(sat) v IC. VBE(on) v IC. Safe Operating Area
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文件文字版本
ZTX869
TYPICAL CHARACTERISTICS
1.6 1.5 675 1.4 ) lts 1.2 o Gain V d l Gain 1.0 ( 1.0 450 a - seil ic at) 0.8 IC/IB=10 ma yp (s r VCE=5V E IC/IB=100 o - T C 0.6 VCE=1V V 0.5 N- 225 FE 0.4 h FE h 0.2 0 0 0.01 0.1 1 10 100 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps)
VCE(sat) v IC hFE v IC
VCE=1V IC/IB=100 2.0 2.0 IC/IB=10 olts) 1.5 olts) 1.5 V (- - (V at) BE (s E 1.0 V 1.0 B V 0.5 0.5 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps)
VBE(sat) v IC VBE(on) v IC
Single Pulse Test at Tamb=25°C 100 ps) Am ( nt 10 re r Cur to c D.C. 1s lle 1 100ms 10ms - Co 1.0ms IC 0.1ms 0.1 0.1 1 10 100 VCE - Collector Voltage (Volts)
Safe Operating Area
3-308
TYPICAL CHARACTERISTICS
1.6 1.5 675 1.4 ) lts 1.2 o Gain V d l Gain 1.0 ( 1.0 450 a - seil ic at) 0.8 IC/IB=10 ma yp (s r VCE=5V E IC/IB=100 o - T C 0.6 VCE=1V V 0.5 N- 225 FE 0.4 h FE h 0.2 0 0 0.01 0.1 1 10 100 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps)
VCE(sat) v IC hFE v IC
VCE=1V IC/IB=100 2.0 2.0 IC/IB=10 olts) 1.5 olts) 1.5 V (- - (V at) BE (s E 1.0 V 1.0 B V 0.5 0.5 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps)
VBE(sat) v IC VBE(on) v IC
Single Pulse Test at Tamb=25°C 100 ps) Am ( nt 10 re r Cur to c D.C. 1s lle 1 100ms 10ms - Co 1.0ms IC 0.1ms 0.1 0.1 1 10 100 VCE - Collector Voltage (Volts)
Safe Operating Area
3-308