Datasheet ZTX1047A (Diodes) - 2

制造商Diodes
描述NPN Silicon Planar Medium Power Нigh Gain Transistor
页数 / 页4 / 2 — ZTX1047A. ZTX1047A. ELECTRICAL. CHARACTERISTICS. (at. Tamb. =. 25°C. …
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文件语言英语

ZTX1047A. ZTX1047A. ELECTRICAL. CHARACTERISTICS. (at. Tamb. =. 25°C. unless. otherwise. stated). TYPICAL. CHARACTERISTICS. PARAMETER. SYMBOL. MIN. TYP

ZTX1047A ZTX1047A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) TYPICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP

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文件文字版本

ZTX1047A ZTX1047A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). TYPICAL CHARACTERISTICS PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 0.8 Collector-Base Breakdown V(BR)CBO 35 55 V IC=100µA +25°C IC/IB=100 Voltage 0.8 0.6 Collector-Emitter VCES 35 55 V IC=100µA 0.6 IC/IB=50 Breakdown Voltage IC/IB=100 0.4 -55°C 0.4 IC/IB=300 +25°C +100°C Collector-Emitter V +175°C CEO 10 14 V IC=10mA Breakdown Voltage 0.2 0.2 Collector-Emitter VCEV 35 55 V IC=100µA, VEB=1V Breakdown Voltage 1mA 10mA 100mA 1A 10A 100A 1mA 10mA 100mA 1A 10A 100A Emitter-Base Breakdown V(BR)EBO 5 8.7 V IE=100µA IC-Collector Current IC-Collector Current Voltage VCE(sat) v IC VCE(sat) v IC Collector Cut-Off Current ICBO 0.3 10 nA VCB=20V Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V 1.4 700 VCE=2V IC/IB=100 Collector Emitter Cut-Off ICES 0.3 10 nA VCES=20V 1.2 Current 600 +100°C -55°C 1.0 +25°C 500 +25°C +100°C +175°C Collector-Emitter Saturation VCE(sat) 23 40 mV IC=0.5A, IB=10mA* 400 0.8 Voltage 44 70 mV IC=1A, IB=10mA* 120 185 mV I 300 0.6 C=3A, IB=10mA* -55°C 130 190 mV IC=4A, IB=20mA* 200 0.4 100 0.2 Base-Emitter VBE(sat) 860 950 mV IC=4A, IB=20mA* Saturation Voltage 1mA 10mA 100mA 1A 10A 100A 1mA 10mA 100mA 1A 10A 100A Base-Emitter Turn-On VBE(on) 810 900 mV IC=4A, VCE=2V* IC-Collector Current IC-Collector Current Voltage hFE v IC VBE(sat) v Ic Static Forward Current hFE 280 440 IC=10mA, VCE=2V* Transfer Ratio 300 450 1200 IC=1A, VCE=2V* 240 380 IC=4A, VCE=2V* 150 230 IC=10A, VCE=2V* 100 Single Pulse Test Tamb=25C 60 110 IC=20A, VCE=2V* 1.2 VCE=2V Transition Frequency f 1.0 -55°C T 150 MHz IC=50mA, VCE=10V +25°C +100°C f=50MHz 0.8 10 +175°C Output Capacitance C 0.6 obo 85 110 pF VCB=10V, f=1MHz DC 0.4 1 1s 100ms ton 130 ns IC=4A, IB=40mA, VCC=10V 10ms Switching Times 0.2 1ms 100us toff 180 ns IC=4A, IB=±40mA, VCC=10V 0.1 1mA 10mA 100mA 1A 10A 100A 0.1V 1V 10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% IC-Collector Current VCE - Collector Voltage VBE(on) v IC Safe Operating Area