Datasheet CBRDFA4-100 (Central Semiconductor)
| 制造商 | Central Semiconductor |
| 描述 | Surface Mount Silicon 4 Amp Bridge Rectifier |
| 页数 / 页 | 6 / 1 — CBRDFA4-100. w w w. c e n t r a l s e m i . c o m. SURFACE MOUNT SILICON. … |
| 文件格式/大小 | PDF / 765 Kb |
| 文件语言 | 英语 |
CBRDFA4-100. w w w. c e n t r a l s e m i . c o m. SURFACE MOUNT SILICON. DESCRIPTION:. 4 AMP BRIDGE RECTIFIER
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CBRDFA4-100 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON DESCRIPTION: 4 AMP BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRDFA4-100 is a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips.
MARKING CODE: BR4100 FEATURES: •
High 4.0A Current Rating
•
Low VF Diodes (1.0V MAX @ IF=4.0A)
BR DFN-A CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 1000 V DC Blocking Voltage VR 1000 V Average Forward Current (TC=112°C) IO 4.0 A Peak Forward Surge Current (8.3ms) IFSM 150 A Operating and Storage Junction Temperature TJ, Tstg -55 to +175 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=1000V 5.0 µA VF IF=4.0A 0.95 1.0 V CJ VR=4.0V, f=1.0MHz 45 pF R2 (23-June 2020)
The CENTRAL SEMICONDUCTOR CBRDFA4-100 is a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips.
MARKING CODE: BR4100 FEATURES: •
High 4.0A Current Rating
•
Low VF Diodes (1.0V MAX @ IF=4.0A)
BR DFN-A CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 1000 V DC Blocking Voltage VR 1000 V Average Forward Current (TC=112°C) IO 4.0 A Peak Forward Surge Current (8.3ms) IFSM 150 A Operating and Storage Junction Temperature TJ, Tstg -55 to +175 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=1000V 5.0 µA VF IF=4.0A 0.95 1.0 V CJ VR=4.0V, f=1.0MHz 45 pF R2 (23-June 2020)