Datasheet SSM3H137TU (Toshiba)

SSM3H137TU MOSFETs Silicon N-Channel MOS SSM3H137TU 1. Applications • Relay Drivers 2. Features (1) AEC-Q101 (Rev. D) qualified. (Note 1) (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 295 mΩ (max) (@VGS = 4.0 V, ID = 0.5 A) RDS(ON) = 280 mΩ (max) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 240 mΩ (max) (@VGS = 10 V, ID = 1.0 A) Note 1: For detail information, Please contact to our sales. 3. Packaging and Pin Assignment 1: Gate 2: Source 3: Drain UFM Start of commercial production 2016-03 ©2016 Toshiba Corporation 1 2016-03-25 Rev.1.0