Datasheet OP467 (Analog Devices) - 4

OP467
@ VS = ±5.0 V, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 0.3 0.5 mV −40°C ≤ TA ≤ +85°C 1 mV Input Bias Current IB VCM = 0 V 125 600 nA VCM = 0 V, −40°C ≤ TA ≤ +85°C 150 700 nA Input Offset Current IOS VCM = 0 V 20 100 nA VCM = 0 V, −40°C ≤ TA ≤ +85°C 150 nA Common-Mode Rejection CMR VCM = ±2.0 V 76 85 dB CMR VCM = ±2.0 V, −40°C ≤ TA ≤ +85°C 76 80 dB Large Signal Voltage Gain AVO RL = 2 kΩ 80 83 dB RL = 2 kΩ, −40°C ≤ TA ≤ +85°C 74 dB Offset Voltage Drift ΔVOS/ΔT 3.5 μV/°C Bias Current Drift ΔIB/ΔT 0.2 pA/°C OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 2 kΩ ±3.0 ±3.5 V RL = 2 kΩ, −40°C ≤ TA ≤ +85°C ±3.0 ±3.20 V POWER SUPPLY Power Supply Rejection Ratio PSRR ±4.5 V ≤ VS ≤ ±5.5 V 92 107 dB −40°C ≤ TA ≤ +85°C 83 105 dB Supply Current ISY VO = 0 V 8 10 mA VO = 0 V, −40°C ≤ TA ≤ +85°C 12 mA DYNAMIC PERFORMANCE Gain Bandwidth Product GBP AV = +1 22 MHz Slew Rate SR VIN = 5 V step, RL = 2 kΩ, CL = 39 pF AV = +1 90 V/μs AV = −1 90 V/μs Full-Power Bandwidth BWρ VIN = 5 V step 2.5 MHz Settling Time tS To 0.01%, VIN = 5 V step 280 ns Phase Margin θ0 45 Degrees NOISE PERFORMANCE Voltage Noise eN p-p f = 0.1 Hz to 10 Hz 0.15 μV p-p Voltage Noise Density eN f = 1 kHz 7 nV/√Hz Current Noise Density iN f = 1 kHz 0.8 pA/√Hz Rev. * | Page 4 of 20 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS WAFER TEST LIMITS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE DICE CHARACTERISTICS ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION OUTPUT SHORT-CIRCUIT PERFORMANCE UNUSED AMPLIFIERS PCB LAYOUT CONSIDERATIONS GROUNDING POWER SUPPLY CONSIDERATIONS SIGNAL CONSIDERATIONS PHASE REVERSAL SATURATION RECOVERY TIME HIGH SPEED INSTRUMENTATION AMPLIFIER 2 MHz BIQUAD BAND-PASS FILTER FAST I-TO-V CONVERTER OP467 SPICE MARCO-MODEL OUTLINE DIMENSIONS ORDERING GUIDE