Datasheet PN200A, MMBT200 (ON Semiconductor) - 3

β β β β
PN200 Typical Performance Characteristics A / MMBT200 — PNP Ge V) N ( E
500
G
0.3
GAI TA V = 5V NT CE L
0.25 β 400
= 10 125 °C VO R URRE E
0.2 300
D C ITT SE 25 °C
0.15
L EM R U
200
O 25 °C P T
0.1
EC CAL
100
- 40 °C L PI L
0.05
O 125 °C neral- Y - 40 °C - C
0
T
0
- T FE
0.01 0.1 1 10 100
A S
0.1 1 10 100 300
h CE I C - COLLECTOR CURRENT (mA) V I C - COLLECTOR CURRE NT (mA) Pur Figure 3. Typical Pulsed Current Gain Figure 4. Collector-Emitter Saturation Voltage p vs. Collector Current vs. Collector Current ose Am ) ) V V ( (
1.2
E
1
E
β
= 10 G plif G TA TA
1
L L
0.8
O - 40°C ier O V
0.8
- 40 °C V 25 °C R N E O
0.6
125 °C R ITT
0.6
25 °C 125 °C E M T E IT
0.4
E
0.4
M S E A E B S V = 5V CE -
0.2
A
0.2
B ATS - BE
0
N V
0.1 1 10 100 300
O
0
BE
0.1 1 10 100 200
I - COLLECTOR CURRE NT (mA) V C I C - C OLLEC TOR CURRE NT (mA) Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage vs. vs. Collector Current Collector Current ) A)
100
V (
95
(n E T V = 50V CB N AG E
10
LT
90
RR O V CU N
85
R
1
O DOW CT K
80
LE A L
0.1
O
75
C BRE - - O R I CB
0.01
CE
70 25 50 75 100 125 0.1 1 10 100 1000
BV RESISTANCE (
Ω
k ) T A - AMBIE NT TEMP ERATURE ( C) ° Figure 7. Collector Cut-Off Current vs. Figure 8. Collector-Emitter Breakdown Voltage with Ambient Temperature Resistance Between Emitter-Base
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