Datasheet BLF989E, BLF989ES (Ampleon) - 3
| 制造商 | Ampleon |
| 描述 | UHF power LDMOS transistor |
| 页数 / 页 | 12 / 3 — BLF989E; BLF989ES. UHF power LDMOS transistor. 5. Thermal. … |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
BLF989E; BLF989ES. UHF power LDMOS transistor. 5. Thermal. characteristics. Table 5. Thermal characteristics. Symbol. Parameter
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BLF989E; BLF989ES UHF power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit
R [1] th(j-c) thermal resistance from junction Tcase = 90 C; VDS = 50 V; 0.28 K/W to case IDS = 3.5 A (main); IDS = 0 A (peak) T [2] case = 90 C; VDS = 50 V; 0.19 K/W PL = 180 W; PAR = 8 dB [1] Measured under DC test conditions, with peak section off. [2] Measured in an ultra-wide Doherty application, using DVB-T (8k OFDM) signal, PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
6. Characteristics Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Main device
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.4 mA 108 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 240 mA 1.5 2.1 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; - 43 - A VDS = 10 V IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 280 nA RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; - 90 - m ID = 8.5 A
Peak device
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.6 mA 108 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 360 mA 1.5 2.0 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; - 67 - A VDS = 10 V IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 280 nA RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; - 60 - m ID = 12.6 A
Table 7. AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Main device
Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 368 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 69 - pF Crss reverse transfer VGS = 0 V; VDS = 50 V; f = 1 MHz - 0.86 - pF capacitance BLF989E_BLF989ES All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 3 April 2020 3 of 12
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in Doherty operation 7.2 Test circuit 7.3 Graphs 7.3.1 DVB-T in production test circuit 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Licenses 12.5 Trademarks 13. Contact information 14. Contents
BLF989E; BLF989ES UHF power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit
R [1] th(j-c) thermal resistance from junction Tcase = 90 C; VDS = 50 V; 0.28 K/W to case IDS = 3.5 A (main); IDS = 0 A (peak) T [2] case = 90 C; VDS = 50 V; 0.19 K/W PL = 180 W; PAR = 8 dB [1] Measured under DC test conditions, with peak section off. [2] Measured in an ultra-wide Doherty application, using DVB-T (8k OFDM) signal, PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
6. Characteristics Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Main device
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.4 mA 108 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 240 mA 1.5 2.1 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; - 43 - A VDS = 10 V IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 280 nA RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; - 90 - m ID = 8.5 A
Peak device
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.6 mA 108 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 360 mA 1.5 2.0 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; - 67 - A VDS = 10 V IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 280 nA RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; - 60 - m ID = 12.6 A
Table 7. AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Main device
Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 368 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 69 - pF Crss reverse transfer VGS = 0 V; VDS = 50 V; f = 1 MHz - 0.86 - pF capacitance BLF989E_BLF989ES All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 3 April 2020 3 of 12
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in Doherty operation 7.2 Test circuit 7.3 Graphs 7.3.1 DVB-T in production test circuit 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Licenses 12.5 Trademarks 13. Contact information 14. Contents