Datasheet TW070J120B (Toshiba) - 2

TW070J120B 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 1200 V Gate-source voltage VGSS +25/-10 Drain current (DC) ( Tc = 25 ) (Note 1) ID 36.0 A Drain current (DC) ( Tc = 100 ) (Note 1) ID 25.5 Drain current (pulsed) (Note 1) IDP 72 Power dissipation ( Tc = 25 ) PD 272 W Channel temperature Tch 175 Storage temperature Tstg -55 to 175 Mounting torque TOR 0.8 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Rth(ch-c) 0.55 /W Channel-to-ambient thermal resistance Rth(ch-a) 50 Note 1: Ensure that the channel temperature does not exceed 175 . Note: This transistor is sensitive to electrostatic discharge and should be handled with care. It should be used for switching applications. ©2020 2 2020-08-05 Toshiba Electronic Devices & Storage Corporation Rev.2.0