Datasheet TW070J120B (Toshiba) - 8
| 制造商 | Toshiba |
| 描述 | MOSFETs Silicon Carbide N-Channel MOS |
| 页数 / 页 | 10 / 8 — TW070J120B. Fig. 8.13. PD. -. Tc. Fig. 8.14. IDR. -. VDS. (Guaranteed. … |
| 文件格式/大小 | PDF / 518 Kb |
| 文件语言 | 英语 |
TW070J120B. Fig. 8.13. PD. -. Tc. Fig. 8.14. IDR. -. VDS. (Guaranteed. Maximum). Fig. 8.15. Rth(ch-c). -. tw. (Guaranteed. Maximum). Fig. 8.16. Safe. Operating. Area
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TW070J120B Fig. 8.13 PD - Tc Fig. 8.14 IDR - VDS (Guaranteed Maximum) Fig. 8.15 Rth(ch-c) - tw (Guaranteed Maximum) Fig. 8.16 Safe Operating Area Fig. 8.17 Reverse Safe Operating Area (Guaranteed Maximum) (Guaranteed Maximum) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2020 8 2020-08-05 Toshiba Electronic Devices & Storage Corporation Rev.2.0