Datasheet SI9424DY (Fairchild)
| 制造商 | Fairchild |
| 描述 | Single P-Channel 2.5V Specified PowerTrench MOSFET |
| 页数 / 页 | 5 / 1 — S i942. 4 DY. Si9424DY Single P-Channel 2.5V Specified PowerTrench. … |
| 文件格式/大小 | PDF / 80 Kb |
| 文件语言 | 英语 |
S i942. 4 DY. Si9424DY Single P-Channel 2.5V Specified PowerTrench. MOSFET. General Description. Features. Applications. SO-8
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文件文字版本
S i942
January 2001
4 DY Si9424DY Single P-Channel 2.5V Specified PowerTrench
MOSFET General Description Features
This P-Channel 2.5V specified MOSFET is produced • -8.0 A, -20 V. R = 0.024 Ω @ V = -4.5 V using Fairchild Semiconductor's advanced DS(on) GS PowerTrench process that has been especially tailored R = 0.032 Ω @ V = -2.5 V. DS(on) GS to minimize on-state resistance and yet maintain superior switching performance. • Low gate charge (23nC typical). These devices are well suited for low voltage and battery • Fast switching speed. powered applications where low in-line power loss and fast switching are required. • High performance trench technology for extremely low R . DS(ON)
Applications
• High power and current handling capability. • DC/DC converter • Load switch • Battery Protection
D D
5 4
D D
6 3 7 2
G S S
8 1
SO-8 S Absolute Maximum Ratings
T = 25°C unless otherwise noted A
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±10 V ID Drain Current - Continuous (Note 1a) -8.0 A - Pulsed -50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity
9424 Si9424DY 13’’ 12mm 2500 units 2001 Fairchild Semiconductor International Si9424DY Rev.A
January 2001
4 DY Si9424DY Single P-Channel 2.5V Specified PowerTrench
MOSFET General Description Features
This P-Channel 2.5V specified MOSFET is produced • -8.0 A, -20 V. R = 0.024 Ω @ V = -4.5 V using Fairchild Semiconductor's advanced DS(on) GS PowerTrench process that has been especially tailored R = 0.032 Ω @ V = -2.5 V. DS(on) GS to minimize on-state resistance and yet maintain superior switching performance. • Low gate charge (23nC typical). These devices are well suited for low voltage and battery • Fast switching speed. powered applications where low in-line power loss and fast switching are required. • High performance trench technology for extremely low R . DS(ON)
Applications
• High power and current handling capability. • DC/DC converter • Load switch • Battery Protection
D D
5 4
D D
6 3 7 2
G S S
8 1
SO-8 S Absolute Maximum Ratings
T = 25°C unless otherwise noted A
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±10 V ID Drain Current - Continuous (Note 1a) -8.0 A - Pulsed -50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity
9424 Si9424DY 13’’ 12mm 2500 units 2001 Fairchild Semiconductor International Si9424DY Rev.A