Datasheet IQE013N04LM6 (Infineon) - 8
制造商 | Infineon |
描述 | OptiMOS Power-MOSFET, 40V |
页数 / 页 | 13 / 8 — OptiMOSTMPower-MOSFET,40V IQE013N04LM6. … |
修订版 | 02_00 |
文件格式/大小 | PDF / 1.4 Mb |
文件语言 | 英语 |
OptiMOSTMPower-MOSFET,40V IQE013N04LM6. Diagram9:Normalizeddrain-sourceonresistance. Diagram10:Typ.gatethresholdvoltage. [V]
该数据表的模型线
文件文字版本
OptiMOSTMPower-MOSFET,40V IQE013N04LM6 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage
2.0 2.00 1.75 1.6 1.50 1.25 1.2
[V]
1.00
GS(th)
510 µA 0.8
V (normalizedto25°C)
0.75
DS(on)
51 µA
R
0.50 0.4 0.25 0.0 0.00 -80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
T j[°C] T j[°C]
RDS(on)=f(Tj),ID=20A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
104 103 25 °C 25 °C, max 175 °C 175 °C, max Ciss 103 102 Coss
[pF] [A] C F I
102 101 Crss 101 100 0 5 10 15 20 25 30 35 40 0.00 0.25 0.50 0.75 1.00 1.25
V DS[V] V SD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj Final Data Sheet 8 Rev.2.0,2020-07-15 Document Outline Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Static characteristics Dynamic characteristics Gate charge characteristics Reverse diode Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer