Datasheet SQJ264EP (Vishay) - 2
| 制造商 | Vishay |
| 描述 | Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs |
| 页数 / 页 | 12 / 2 — SQJ264EP. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. TYP. … |
| 文件格式/大小 | PDF / 349 Kb |
| 文件语言 | 英语 |
SQJ264EP. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. TYP. MAX. UNIT. Static. Dynamic b
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SQJ264EP
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
VGS = 0 V, ID = 250 μA N-Ch 1 60 - - Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA N-Ch 2 60 - - V VDS = VGS, ID = 250 μA N-Ch 1 2.5 3.0 3.5 Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA N-Ch 2 2.5 3.0 3.5 N-Ch 1 - - ± 100 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V nA N-Ch 2 - - ± 100 VGS = 0 V VDS = 60 V N-Ch 1 - - 1 VGS = 0 V VDS = 60 V N-Ch 2 - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C N-Ch 1 - - 50 Zero gate voltage drain current IDSS μA VGS = 0 V VDS = 60 V, TJ = 125 °C N-Ch 2 - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C N-Ch 1 - - 250 VGS = 0 V VDS = 60 V, TJ = 175 °C N-Ch 2 - - 250 VGS = 10 V VDS ≥ 5 V N-Ch 1 15 - - On-state drain current a ID(on) A VGS = 10 V VDS ≥ 5 V N-Ch 2 30 - - VGS = 10 V ID = 6 A N-Ch 1 - 0.0165 0.0200 VGS = 10 V ID = 10 A N-Ch 2 - 0.0071 0.0086 VGS = 10 V ID = 6 A, TJ = 125 °C N-Ch 1 - - 0.0320 Drain-source on-state resistance a RDS(on) Ω VGS = 10 V ID = 10 A, TJ = 125 °C N-Ch 2 - - 0.0135 VGS = 10 V ID = 6 A, TJ = 175 °C N-Ch 1 - - 0.0390 VGS = 10 V ID = 10 A, TJ = 175 °C N-Ch 2 - - 0.0167 VDS = 10 V, ID = 6 A N-Ch 1 - 24 - Forward transconductance b gfs S VDS = 10 V, ID = 10 A N-Ch 2 - 98 -
Dynamic b
VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 687 1000 Input capacitance Ciss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 1490 2100 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 313 500 Output capacitance Coss pF VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 777 1100 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 10 15 Reverse transfer capacitance Crss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 21 30 VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 9.2 16 Total gate charge c Qg VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 19.2 32 VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 3.2 - nC Gate-source charge c Qgs VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 6.3 - VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 0.8 - Gate-drain charge c Qgd VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 1.5 - N-Ch 1 0.35 0.74 1.20 Gate resistance Rg f = 1 MHz Ω N-Ch 2 0.20 0.42 0.65 S19-1108-Rev. A, 30-Dec-2019
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Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
VGS = 0 V, ID = 250 μA N-Ch 1 60 - - Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA N-Ch 2 60 - - V VDS = VGS, ID = 250 μA N-Ch 1 2.5 3.0 3.5 Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA N-Ch 2 2.5 3.0 3.5 N-Ch 1 - - ± 100 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V nA N-Ch 2 - - ± 100 VGS = 0 V VDS = 60 V N-Ch 1 - - 1 VGS = 0 V VDS = 60 V N-Ch 2 - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C N-Ch 1 - - 50 Zero gate voltage drain current IDSS μA VGS = 0 V VDS = 60 V, TJ = 125 °C N-Ch 2 - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C N-Ch 1 - - 250 VGS = 0 V VDS = 60 V, TJ = 175 °C N-Ch 2 - - 250 VGS = 10 V VDS ≥ 5 V N-Ch 1 15 - - On-state drain current a ID(on) A VGS = 10 V VDS ≥ 5 V N-Ch 2 30 - - VGS = 10 V ID = 6 A N-Ch 1 - 0.0165 0.0200 VGS = 10 V ID = 10 A N-Ch 2 - 0.0071 0.0086 VGS = 10 V ID = 6 A, TJ = 125 °C N-Ch 1 - - 0.0320 Drain-source on-state resistance a RDS(on) Ω VGS = 10 V ID = 10 A, TJ = 125 °C N-Ch 2 - - 0.0135 VGS = 10 V ID = 6 A, TJ = 175 °C N-Ch 1 - - 0.0390 VGS = 10 V ID = 10 A, TJ = 175 °C N-Ch 2 - - 0.0167 VDS = 10 V, ID = 6 A N-Ch 1 - 24 - Forward transconductance b gfs S VDS = 10 V, ID = 10 A N-Ch 2 - 98 -
Dynamic b
VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 687 1000 Input capacitance Ciss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 1490 2100 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 313 500 Output capacitance Coss pF VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 777 1100 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 10 15 Reverse transfer capacitance Crss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 21 30 VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 9.2 16 Total gate charge c Qg VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 19.2 32 VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 3.2 - nC Gate-source charge c Qgs VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 6.3 - VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 0.8 - Gate-drain charge c Qgd VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 1.5 - N-Ch 1 0.35 0.74 1.20 Gate resistance Rg f = 1 MHz Ω N-Ch 2 0.20 0.42 0.65 S19-1108-Rev. A, 30-Dec-2019
2
Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000