Datasheet SQJ264EP (Vishay) - 8
| 制造商 | Vishay |
| 描述 | Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs |
| 页数 / 页 | 12 / 8 — SQJ264EP. N-CHANNEL 2 TYPICAL CHARACTERISTICS. Source Drain Diode Forward … |
| 文件格式/大小 | PDF / 349 Kb |
| 文件语言 | 英语 |
SQJ264EP. N-CHANNEL 2 TYPICAL CHARACTERISTICS. Source Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage
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SQJ264EP
www.vishay.com Vishay Siliconix
N-CHANNEL 2 TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title Axis Title 2.0 10000 0.05 10000 d) e liz 1.7 I = 8 A D ) 0.04 a Ω 1000 1000 1.4 V = 10 V GS 0.03 ne ne ne ine ne ine tance (Norm s 1st li 2nd li 1st li 2nd l n-Resistance ( 2nd li 1.1 2nd l 0.02 O 100 - T = 150 °C J 100 n-Resi O (on) - S 0.8 D 0.01 R (on) S DR T = 25 °C J 0.5 10 0.00 10 -50 -25 0 25 50 75 100 125 150 175 0 2 4 6 8 10 T - Junction Temperature (°C) V - Gate-to-Source Voltage (V) J GS
Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Axis Title Axis Title 73 10000 0.5 10000 ) I = 1 mA D (V 71 0.1 ) ltage o 1000 1000 69 -0.3 nce (V ne ne a ne ine ne ine I = 5 mA D ource V ari 1st li V 2nd li 1st li 2nd l - 2nd li 67 2nd l ) -0.7 100 (th 100 rain-to-S GSV D I = 250 μA D - 65 -1.1 DSV 63 10 -1.5 10 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 T - Junction Temperature (°C) T - Junction Temperature (°C) J J
Threshold Voltage Drain Source Breakdown vs. Junction Temperature
Axis Title Axis Title 100 10000 1000 10000 I limited DM 100 T = 150 °C ) 10 J ) (A 100 μs 1000 1000 10 rrent u ne ne rrent (A ine ne ne ine u 1 1 ms C 1st li 2nd li n 2nd l 1st li 10 ms 2nd li T = 25 °C 2nd l 1 rai ource C J Limited by R a 100 ms, 1 s, S 100 D DS(on) 100 - - 10 s, DC I S 0.1 I D BVDSS limited 0.1 T = 25 °C, C single pulse 0.01 10 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 V - Source-to-Drain Voltage (V) V - Drain-to-Source Voltage (V) SD DS
On-Resistance vs. Junction Temperature Safe Operating Area
S19-1108-Rev. A, 30-Dec-2019
8
Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
N-CHANNEL 2 TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title Axis Title 2.0 10000 0.05 10000 d) e liz 1.7 I = 8 A D ) 0.04 a Ω 1000 1000 1.4 V = 10 V GS 0.03 ne ne ne ine ne ine tance (Norm s 1st li 2nd li 1st li 2nd l n-Resistance ( 2nd li 1.1 2nd l 0.02 O 100 - T = 150 °C J 100 n-Resi O (on) - S 0.8 D 0.01 R (on) S DR T = 25 °C J 0.5 10 0.00 10 -50 -25 0 25 50 75 100 125 150 175 0 2 4 6 8 10 T - Junction Temperature (°C) V - Gate-to-Source Voltage (V) J GS
Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Axis Title Axis Title 73 10000 0.5 10000 ) I = 1 mA D (V 71 0.1 ) ltage o 1000 1000 69 -0.3 nce (V ne ne a ne ine ne ine I = 5 mA D ource V ari 1st li V 2nd li 1st li 2nd l - 2nd li 67 2nd l ) -0.7 100 (th 100 rain-to-S GSV D I = 250 μA D - 65 -1.1 DSV 63 10 -1.5 10 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 T - Junction Temperature (°C) T - Junction Temperature (°C) J J
Threshold Voltage Drain Source Breakdown vs. Junction Temperature
Axis Title Axis Title 100 10000 1000 10000 I limited DM 100 T = 150 °C ) 10 J ) (A 100 μs 1000 1000 10 rrent u ne ne rrent (A ine ne ne ine u 1 1 ms C 1st li 2nd li n 2nd l 1st li 10 ms 2nd li T = 25 °C 2nd l 1 rai ource C J Limited by R a 100 ms, 1 s, S 100 D DS(on) 100 - - 10 s, DC I S 0.1 I D BVDSS limited 0.1 T = 25 °C, C single pulse 0.01 10 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 V - Source-to-Drain Voltage (V) V - Drain-to-Source Voltage (V) SD DS
On-Resistance vs. Junction Temperature Safe Operating Area
S19-1108-Rev. A, 30-Dec-2019
8
Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000