Datasheet MMDT3906 (Diodes) - 2

制造商Diodes
描述40V Dual PNP Small Signal Transistor in SOT363
页数 / 页7 / 2 — MMDT3906. Absolute Maximum Ratings. Characteristic. Symbol. Value. Unit. …
文件格式/大小PDF / 482 Kb
文件语言英语

MMDT3906. Absolute Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. ESD Ratings. JEDEC Class

MMDT3906 Absolute Maximum Ratings Characteristic Symbol Value Unit Thermal Characteristics ESD Ratings JEDEC Class

该数据表的模型线

文件文字版本

MMDT3906 Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA
Thermal Characteristics Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 200 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings
(Note 6)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMDT3906 2 of 7 April 2016 Document number: DS30124 Rev. 13- 2
www.diodes.com
© Diodes Incorporated