Datasheet 2N2369 (CDIL)

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage
VCEO 15 V
Collector -Emitter Voltage
VCES 40 V
Collector -Base Voltage
VCBO 40 V
Emitter -Base Voltage
VEBO 4.5 V
Collector Current Continuous
IC 200 mA
Collector Current Peak(10us pulse)
IC(peak) 500 mA
Power Dissipation@ Ta=25 degC
PD 360 mW
Derate Above 25 deg C
2.06 mW/deg C
@Tc=25 deg C
PD 1.2 W
@Tc=100 deg C
PD 0.68 W
Derate Above100 deg C
6.85 mW/deg C
Operating And Storage Junction
Tj, Tstg -65 to +200 deg C
Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT Collector -Emitter Voltage
VCEO*(sus)IC=10mA, IB=0 >15 >15 V
Collector -Emitter Voltage
VCES IC=10uA, VBE=0 >40 >40 V
Collector -Base Voltage
VCBO IC=10uA, IE=0 >40 >40 V
Emitter -Base Voltage
VEBO IE=10uA, IC=0 >4.5 >4.5 V
Collector-Cut off Current
ICBO VCB=20V, IE=0 <400 - nA VCB=20V, IE=0, Ta=150 deg C <30 - uA ICES VCE=20V, VBE=0 - <400 nA
Base Current
IB VCE=20V, VBE=0 - <400 nA
Collector Emitter Saturation Voltage
VCE(Sat)* IC=10mA,IB=1mA <0.25 <0.20 V IC=30mA,IB=3mA - <0.25 V IC=100mA,IB=10mA - <0.50 V IC=10mA,IB=1mA,Ta= +125 deg C - <0.30 V
Base Emitter Saturation Voltage
VBE(Sat) * IC=10mA,IB=1mA 0.7-0.85 0.7-0.85 V IC=30mA,IB=3mA - <1.15 V IC=100mA,IB=10mA - <1.60 V IC=10mA,IB=1mA,Ta= +125 deg C - >0.59 V IC=10mA,IB=1mA, Ta= -55 deg C - <1.02 V
DC Current
hFE* IC=10mA, VCE=1V 40-120 40-120 IC=10mA,VCE=1V, Ta= -55 deg C >20 - IC=10mA,VCE=0.35V, Ta= -55 deg C - >20 Continental Device India Limited
Data Sheet
Page 1 of 3