Datasheet BLP2425M10S250P (Ampleon) - 2
| 制造商 | Ampleon |
| 描述 | Power LDMOS transistor |
| 页数 / 页 | 11 / 2 — BLP2425M10S250P. Power LDMOS transistor. 2. Pinning. information. Table … |
| 文件格式/大小 | PDF / 1.0 Mb |
| 文件语言 | 英语 |
BLP2425M10S250P. Power LDMOS transistor. 2. Pinning. information. Table 2. Pinning. Pin. Description. Simplified outline. Graphic symbol
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BLP2425M10S250P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol
1 gate1 4 2 gate2 4 3 3 drain2 1 4 drain1 5 2 5 source [1] 1 2 3 amp01358 [1] Connected to flange.
3. Ordering information Table 3. Ordering information Type number Package Name Description Version
BLP2425M10S250P - overmolded plastic earless flanged package; OMP-780-4F-1 4 leads
4. Limiting values Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V VGS gate-source voltage 6 +13 V Tstg storage temperature 65 +150 C Tj junction temperature [1] - 225 C [1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF calculator.
5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit
Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL = 250 W 0.32 K/W BLP2425M10S250P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 26 March 2020 2 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
BLP2425M10S250P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol
1 gate1 4 2 gate2 4 3 3 drain2 1 4 drain1 5 2 5 source [1] 1 2 3 amp01358 [1] Connected to flange.
3. Ordering information Table 3. Ordering information Type number Package Name Description Version
BLP2425M10S250P - overmolded plastic earless flanged package; OMP-780-4F-1 4 leads
4. Limiting values Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V VGS gate-source voltage 6 +13 V Tstg storage temperature 65 +150 C Tj junction temperature [1] - 225 C [1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF calculator.
5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit
Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL = 250 W 0.32 K/W BLP2425M10S250P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 26 March 2020 2 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents