Datasheet 6ED2230S12T (Infineon)

6ED2230S12T 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP Features
• Infineon Thin-Film-SOI technology
Product summary
• Fully operational to +1200 V • VOFFSET ≤ 1200 V • Integrated Ultra‐fast Bootstrap Diode • VCC = 13 V - 20 V • Floating channel designed for bootstrap operation • I = 0.35 A/0.65 A • Output source/sink current capability +0.35 A/‐0.65 A O+/- (typ.) • ton/off (typ.) = 700 ns/650 ns • Tolerant to negative transient voltage up to -100 V • Deadtime (typ.) = 460 ns (Pulse width is up 700 ns) given by SOI-technology • Undervoltage lockout for both channels • 3.3 V, 5 V, and 15 V input logic compatible
Package
• Over current protection with ±5% ITRIP threshold • Fault reporting, automatic Fault clear and Enable function on the same pin (RFE) • Matched propagation delay for all channels • Integrated 460 ns deadtime protection • Shoot-through (cross-conduction) protection DSO-24 (DSO-28 with 4 pins removed)
Typical applications
• Industrial Drives • Embedded inverters for Motor Control in Pumps, Fans. • Commercial and Lite Commercial Air Conditioning
Description
The 6ED2230S12T is a high voltage, high speed IGBT with three independent high side and low side referenced output channels for three phase applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or TTL outputs, down to 3.3 V logic. An over‐current protection (OCP) function which terminates all six outputs can also be derived from this resistor. An open drain FAULT signal is provided to indicate that an over-current or undervoltage shutdown has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC network. The output drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 1200 V. Propagation delays are matched to simplify the HVIC’s use in high frequency applications. DC BUS + Vcc VB1,2,3 (Refer to Lead Assignments for Hin1,2,3 Lin1,2,3 correct pin configuration). HO1,2,3 RFE This diagram shows electrical ITRIP VS1,2,3 connections only. Please refer to To load Application Notes & Design Tips for proper circuit board layout. LO1,2,3 Vss COM DC BUS -
Figure 1 Typical connection diagram
Datasheet Please read the Important Notice and Warnings at the end of this document <Revision 1.3>
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2020‐03‐10 Document Outline Features Typical applications Description Product validation Device information Table of contents 1 Block diagram 2 Lead configuration 3 Absolute maximum ratings 4 Recommended operating conditions 5 Electrical characteristics 5.1 Static electrical characteristics 5.2 Dynamic electrical characteristics 6 Application information and additional details 6.1 IGBT/MOSFET gate drive 6.2 Switching and timing relationships 6.2.1 Deadtime 6.2.2 Matched propagation delays 6.3 Input logic compatibility 6.4 Undervoltage lockout protection 6.5 Shoot-Through protection 6.6 Enable input 6.7 Fault reporting and programmable fault clear timer 6.8 Over-Current protection 6.9 Truth table: Undervoltage lockout, ITRIP, and ENABLE 6.10 Advanced input filter 6.11 Short-Pulse / Noise rejection 6.12 Integrated bootstrap diodes 6.13 Tolerant to negative VS transients 6.14 PCB layout tips 6.15 Additional documentation 7 Package information 7.1 Package information DSO-24 (DSO-28 4 pin removed) 8 Qualification information 9 Related products Revision history Insert from: "6EDL05I12.pdf" 6EDL05I12.vsdx Page-4