Datasheet 2N3055, MJ2955 (ON Semiconductor) - 2

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2N3055(NPN), MJ2955(PNP) THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Thermal Resistance, Junction−to−Case RqJC 1.52 _C/W ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS
(TC = 25_C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ
Characteristic Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ
OFF CHARACTERISTICS
* Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) VCEO(sus) 60 − Vdc Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, RBE = 100 W) VCER(sus) 70 − Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO − 0.7 mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ Collector Cutoff Current ICEX mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) − 1.0 (V − 5.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) ÎÎÎÎ IEBO − ÎÎÎ 5.0 mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
* (Note 1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain hFE − (IC = 4.0 Adc, VCE = 4.0 Vdc) 20 70 (IC = 10 Adc, VCE = 4.0 Vdc) 5.0 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 4.0 Adc, IB = 400 mAdc) − 1.1 (IC = 10 Adc, IB = 3.3 Adc) 3.0 Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − 1.5 Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ Second Breakdown Collector Current with Base Forward Biased Is/b 2.87 − Adc (V ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CE = 40 Vdc, t = 1.0 s, Nonrepetitive) ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current Gain − Bandwidth Product (I ÎÎÎÎ C = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) ÎÎÎÎ fT 2.5 ÎÎÎ − ÎÎÎ MHz ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ *Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 15 120 − ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ *Small−Signal Current Gain Cutoff Frequency (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz) fhfe 10 − kHz ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ *Indicates Within JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 There are two limitations on the power handling ability of 50 ms a transistor: average junction temperature and second 10 dc 1 ms breakdown. Safe operating area curves indicate IC − VCE (AMP) 6 limits of the transistor that must be observed for reliable 4 operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. CURRENT 500 ms 2 250 ms The data of Figure 2 is based on T OR C = 25°C; TJ(pk) is variable depending on power level. Second breakdown 1 pulse limits are valid for duty cycles to 10% but must be 0.6 derated for temperature according to Figure 1. , COLLECT BONDING WIRE LIMIT I C 0.4 THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 0.2 6 10 20 40 60 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Active Region Safe Operating Area http://onsemi.com 2