Datasheet H11AV1M, H11AV1AM, H11AV2M, H11AV2AM (Fairchild) - 4
| 制造商 | Fairchild |
| 描述 | Phototransistor Optocouplers |
| 页数 / 页 | 10 / 4 — H11A. Safety and Insulation Ratings. V1M,. Symbol. Parameter. Min. Typ. … |
| 文件格式/大小 | PDF / 251 Kb |
| 文件语言 | 英语 |
H11A. Safety and Insulation Ratings. V1M,. Symbol. Parameter. Min. Typ. Max. Unit. V1AM,. V2M,. V2AM — Phototransistor Optocoupler
该数据表的模型线
文件文字版本
H11A Safety and Insulation Ratings V1M,
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
H11A Symbol Parameter Min. Typ. Max. Unit
Installation Classifications per DIN VDE 0110/1.89
V1AM,
Table 1 For Rated Main Voltage < 150Vrms I-IV
H11A
For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2
V2M,
CTI Comparative Tracking Index 175
H11A
VPR Input to Output Test Voltage, Method b, 1594 Vpeak VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC
V2AM — Phototransistor Optocoupler
Input to Output Test Voltage, Method a, 1275 Vpeak VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC VIORM Max. Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm RIO Insulation Resistance at Ts, V 9 Ω IO = 500V 10
s
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 4
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
H11A Symbol Parameter Min. Typ. Max. Unit
Installation Classifications per DIN VDE 0110/1.89
V1AM,
Table 1 For Rated Main Voltage < 150Vrms I-IV
H11A
For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2
V2M,
CTI Comparative Tracking Index 175
H11A
VPR Input to Output Test Voltage, Method b, 1594 Vpeak VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC
V2AM — Phototransistor Optocoupler
Input to Output Test Voltage, Method a, 1275 Vpeak VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC VIORM Max. Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm RIO Insulation Resistance at Ts, V 9 Ω IO = 500V 10
s
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 4