Datasheet IRG4PH40UD2-EP (Infineon) - 2

IRG4PH40UD2-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V Collector-to-Emitter Breakdown Voltage e (BR)CES 1200 — — V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.43 — V/°C VGE = 0V, IC = 1mA — 2.43 3.1 V IC = 21A VGE = 15V VCE(on) Collector-to-Emitter Saturation Voltage — 2.97 — IC = 41A See Fig.2, 5 — 2.47 — IC = 21A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -11 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance f 16 24 — S VCE = 100V, IC = 21A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 1200V — — 5000 VGE = 0V, VCE = 1200V, TJ = 150°C VFM Diode Forward Voltage Drop — 3.4 3.8 V IF = 10A See Fig.13 — 3.3 3.7 IF = 10A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 100 150 IC = 21A Qge Gate-to-Emitter Charge (turn-on) — 18 24 nC VCC = 400V See Fig.8 Qgc Gate-to-Collector Charge (turn-on) — 34 50 VGE = 15V td(on) Turn-On delay time — 22 — tr Rise time — 26 — ns IC = 21A, VCC = 800V td(off) Turn-Off delay time — 100 140 VGE = 15V, RG = 10Ω tf Fall time — 200 300 Energy losses include "tail" and Eon Turn-On Switching Loss — 1950 — diode reverse recovery. Eoff Turn-Off Switching Loss — 1710 — µJ See Fig. 9, 10, 11, 18 Etot Total Switching Loss — 3660 4490 td(on) Turn-On delay time — 21 — TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise time — 25 — ns IC = 21A, VCC = 800V td(off) Turn-Off delay time — 220 — VGE = 15V, RG = 10Ω tf Fall time — 380 — Energy losses include "tail" and ETS Total Switching Loss — 6220 — µJ diode reverse recovery. LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 2100 — VGE = 0V Coes Output Capacitance — 99 — pF VCC = 30V, See Fig.7 Cres Reverse Transfer Capacitance — 12 — f = 1.0MHz trr Diode Reverse Recovery Time — 50 76 ns TJ=25°C See Fig — 72 110 TJ=125°C 14 IF = 8.0A Irr Diode Peak Reverse Recovery Current — 4.4 7.0 A TJ=25°C See Fig — 5.9 8.8 TJ=125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 130 200 nC TJ=25°C See Fig — 250 380 TJ=125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 210 — A/µs TJ=25°C See Fig During tb — 180 — TJ=125°C 17 2 www.irf.com