Datasheet IRG4PH40UDPbF (International Rectifier) - 2

IRG4PH40UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 1200 — — V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.43 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.43 3.1 IC = 21A VGE = 15V — 2.97 — V IC = 41A See Fig. 2, 5 — 2.47 — IC = 21A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance T 16 24 — S VCE = 100V, IC = 21A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 5000 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 2.6 3.3 V IC = 8.0A See Fig. 13 — 2.4 3.1 IC = 8.0A, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 86 130 IC = 21A Qge Gate - Emitter Charge (turn-on) — 13 20 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) — 29 44 VGE = 15V td(on) Turn-On Delay Time — 46 — TJ = 25°C tr Rise Time — 35 — ns IC = 21A, VCC = 800V td(off) Turn-Off Delay Time — 97 150 VGE = 15V, RG = 10Ω tf Fall Time — 240 360 Energy losses include "tail" and Eon Turn-On Switching Loss — 1.80 — diode reverse recovery. Eoff Turn-Off Switching Loss — 1.93 — mJ See Fig. 9, 10, 18 Ets Total Switching Loss — 3.73 4.6 td(on) Turn-On Delay Time — 42 — TJ = 150°C, See Fig. 11, 18 tr Rise Time — 32 — ns IC = 21A, VCC = 800V td(off) Turn-Off Delay Time — 240 — VGE = 15V, RG = 10Ω tf Fall Time — 510 — Energy losses include "tail" and Ets Total Switching Loss — 7.04 — mJ diode reverse recovery. LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 1800 — VGE = 0V Coes Output Capacitance — 120 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 18 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 63 95 ns TJ = 25°C See Fig. — 106 160 TJ = 125°C 14 IF = 8.0A Irr Diode Peak Reverse Recovery Current — 4.5 8.0 A TJ = 25°C See Fig. — 6.2 11 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 140 380 nC TJ = 25°C See Fig. — 335 880 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 133 — A/µs TJ = 25°C See Fig. During tb — 85 — TJ = 125°C 17 2 www.irf.com