Datasheet IRG4PH50UDPbF (Infineon)
| 制造商 | Infineon |
| 描述 | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| 页数 / 页 | 11 / 1 — Features. Benefits. Absolute Maximum Ratings. Parameter. Max. Units. … |
| 修订版 | 01_00 |
| 文件格式/大小 | PDF / 693 Kb |
| 文件语言 | 英语 |
Features. Benefits. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Min. Typ
该数据表的模型线
文件文字版本
PD -95190 IRG4PH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE
Features
C • UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.78V • New IGBT design provides tighter G parameter distribution and higher efficiency than previous generations @V E GE = 15V, IC = 24A • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in n-channel bridge configurations • Industry standard TO-247AC package • Lead-Free
Benefits
• Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing TO-247AC
Absolute Maximum Ratings Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 45 IC @ TC = 100°C Continuous Collector Current 24 A ICM Pulsed Collector Current Q 180 ILM Clamped Inductive Load Current R 180 IF @ TC = 100°C Diode Continuous Forward Current 16 IFM Diode Maximum Forward Current 180 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 200 W PD @ TC = 100°C Maximum Power Dissipation 78 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.64 RθJC Junction-to-Case - Diode ––– ––– 0.83 °C/W RθCS Case-to-Sink, flat, greased surface ––– 0.24 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 40 Wt Weight ––– 6 (0.21) ––– g (oz) www.irf.com 1 04/26/04
Features
C • UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.78V • New IGBT design provides tighter G parameter distribution and higher efficiency than previous generations @V E GE = 15V, IC = 24A • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in n-channel bridge configurations • Industry standard TO-247AC package • Lead-Free
Benefits
• Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing TO-247AC
Absolute Maximum Ratings Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 45 IC @ TC = 100°C Continuous Collector Current 24 A ICM Pulsed Collector Current Q 180 ILM Clamped Inductive Load Current R 180 IF @ TC = 100°C Diode Continuous Forward Current 16 IFM Diode Maximum Forward Current 180 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 200 W PD @ TC = 100°C Maximum Power Dissipation 78 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.64 RθJC Junction-to-Case - Diode ––– ––– 0.83 °C/W RθCS Case-to-Sink, flat, greased surface ––– 0.24 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 40 Wt Weight ––– 6 (0.21) ––– g (oz) www.irf.com 1 04/26/04